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SVD302

Onsemi

SVD302 by Onsemi

SVD302 by Onsemi is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. With a max operating temperature of 150 °C, it offers a nominal capacitance of 15 pF and min breakdown voltage of 27 V. This surface-mount diode in microwave package style has a max power dissipation of 0.5 W, making it suitable for high-frequency circuit designs.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

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Vyrian

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TANS Electronics

Latvia . 6,921 parts In-Stock

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SupplyDigital Components

Austria . 6,508 parts In-Stock

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Problanco Electronics

Mexico . 1,912 parts In-Stock

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Corphita

USA . 1,827 parts In-Stock

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Kulean Microsystems

USA . 1,246 parts In-Stock

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UHIMA Technologies

Türkiye . 981 parts In-Stock

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Corohmni

South Africa . 214 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the SVD302 by Onsemi, a top-quality Varactor Diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this hyperabrupt diode is perfect for X Band applications and features a flat terminal form for easy installation. Whether you're working on radar systems, communication devices, or other high-frequency electronics, the SVD302 delivers superior variable capacitance with a minimum breakdown voltage of 27V and a maximum power dissipation of 0.5W. Upgrade your projects with the SVD302 and experience the difference Onsemi quality can make.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes the Varactor Diode easy to manage and integrate into circuits.

Variable Capacitance Diode Classification: HYPERABRUPT

The hyperabrupt classification indicates a fast response time and precise control over capacitance, ideal for high-frequency applications.

Frequency Band: X BAND

Designed specifically for X band frequencies, ensuring optimal performance in this range.

Surface Mount: YES

Surface mount capability simplifies installation and allows for compact circuit designs.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and enhances reliability.

Package Style (Meter): MICROWAVE

The microwave package style is well-suited for high-frequency operations, ensuring efficient signal transmission.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this Varactor Diode can withstand extended use in various environments.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation rating allows for reliable performance under demanding conditions.

Nominal Diode Capacitance: 15 pF

The nominal capacitance value of 15 pF provides versatility for different applications that require varying capacitance levels.

Minimum Breakdown Voltage: 27 V

The minimum breakdown voltage of 27 V indicates robustness and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers flexibility in tuning and adjusting capacitance as needed.

Terminal Form: FLAT

The flat terminal form factor enables easy soldering and efficient connection within a circuit.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a high maximum reverse voltage rating, this Varactor Diode can handle reverse voltage spikes effectively.

Diode Element Material: GALLIUM ARSENIDE

The use of gallium arsenide material ensures high performance and reliability, particularly in high-frequency applications.

Minimum Diode Capacitance Ratio: 17

A minimum capacitance ratio of 17 indicates a wide range of capacitance tuning options, allowing for precise control.

Technical Specifications

Varactor Diodes SVD302 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

27 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

17

Nominal Diode Capacitance:

15 pF

Diode Element Material:

GALLIUM ARSENIDE

Frequency Band:

X BAND

JESD-30 Code:

X-XXMW-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROWAVE

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

SVD302 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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