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1N4802

Onsemi

1N4802 by Onsemi

1N4802 by Onsemi is a Varactor Diode with 8.2 pF capacitance, 110 V breakdown voltage, and 0.5 W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

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Digiode

USA . 1,079 parts In-Stock

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Native Components

USA . 391 parts In-Stock

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$1.255

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Northwest PG Solutions

USA . 1,646 parts In-Stock

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SupplyDigital Components

Austria . 5,455 parts In-Stock

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Problanco Electronics

Mexico . 5,089 parts In-Stock

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Kulean Microsystems

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Corphita

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TANS Electronics

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UHIMA Technologies

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Corohmni

South Africa . 429 parts In-Stock

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Overview

Discover the innovative 1N4802 Varactor Diode by Onsemi, known for its superior quality and precision engineering. This single-config diode offers a wide range of applications in electronics, telecommunications, and RF circuits. With a high minimum quality factor of 15 and a low reverse current, this diode ensures optimal performance and reliability. Experience the benefits of increased capacitance control and precise voltage regulation with the 1N4802, making it the ideal choice for your next project. Trust Onsemi's reputation for excellence and choose the 1N4802 for unmatched value and performance.

Feature Benefit Bullets

Minimum Quality Factor: 15

A high quality factor ensures better overall performance and stability in the circuit, making this Varactor Diode a reliable choice.

Package Body Material: GLASS

Glass material provides high durability and resistance to environmental factors, ensuring a longer lifespan for the diode.

Config: SINGLE

Single configuration simplifies the circuit design and allows for easier integration, making it ideal for various applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification enables precise control over capacitance variation, offering better tuning capabilities for RF and microwave circuits.

Maximum Reverse Current: 0.000000005 uA

Low reverse current minimizes power loss and improves efficiency in the circuit, making it an energy-efficient choice.

Package Shape: ROUND

Round shape allows for easy mounting and installation, making it convenient for both prototyping and production applications.

Reverse Test Voltage: 100 V

High reverse test voltage ensures robust performance and reliability under varying voltage conditions, making it suitable for demanding environments.

No. of Terminals: 2

Two terminals simplify the connection and installation process, making this Varactor Diode user-friendly for both experienced engineers and hobbyists.

Package Style (Meter): LONG FORM

Long form package style offers additional protection and heat dissipation, enhancing the overall reliability and lifespan of the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for versatile use in various temperature environments, making it suitable for a wide range of applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions, making it a versatile choice for different climates.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability, ensuring secure connections and reliable performance in the circuit.

Terminal Position: AXIAL

Axial terminal position allows for easy PCB mounting and soldering, making it convenient for assembly and maintenance purposes.

Case Connection: ISOLATED

Isolated case connection enhances safety and protection in the circuit, reducing the risk of electrical shorts or malfunctions.

Maximum Power Dissipation: 0.5 W

High maximum power dissipation capability ensures efficient heat dissipation and reliable performance under high power loads.

Nominal Diode Capacitance: 8.2 pF

Optimal capacitance value enables precise tuning and modulation in RF circuits, making it a versatile choice for frequency control applications.

Minimum Breakdown Voltage: 110 V

High minimum breakdown voltage provides robust protection against voltage spikes and surges, ensuring long-term reliability in the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type offers adjustable capacitance levels for frequency modulation and tuning, making it suitable for diverse RF applications.

Terminal Form: WIRE

Wire terminal form allows for flexible and secure connections, making it easy to integrate the diode into different circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage ensures reliable performance and protection against reverse voltage conditions, making it a durable choice for long-term use.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for precise tuning and adjustment in the circuit, ensuring optimal performance in RF and microwave applications.

Diode Element Material: SILICON

Silicon element material offers high efficiency and temperature stability, ensuring reliable performance over a wide range of operating conditions.

Minimum Diode Capacitance Ratio: 2.42

High minimum capacitance ratio provides excellent tuning range and flexibility in frequency modulation, making it a versatile choice for RF circuit design.

Technical Specifications

Varactor Diodes 1N4802 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

110 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.42

Nominal Diode Capacitance:

8.2 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

100 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4802 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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