Loading...

1N4803

Onsemi

1N4803 by Onsemi

1N4803 by Onsemi is a varactor diode with a min quality factor of 15, max reverse current of 0.000000005 uA, and nominal capacitance of 10 pF. It is used in applications requiring variable capacitance diodes for tuning circuits at temperatures ranging from -65 to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,227 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,227

-

-

-

-

Vyrian

USA . 114 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

114

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 8,168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,168

-

-

-

-

Problanco Electronics

Mexico . 6,849 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,849

-

-

-

-

SupplyDigital Components

Austria . 2,114 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,114

-

-

-

-

Corphita

USA . 2,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,090

-

-

-

-

Kulean Microsystems

USA . 1,463 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,463

-

-

-

-

Northwest PG Solutions

USA . 689 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

689

-

-

-

-

Native Components

USA . 554 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

554

-

-

-

-

Corohmni

South Africa . 411 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

411

-

-

-

-

UHIMA Technologies

Türkiye . 55 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

55

-

-

-

-

Overview

Elevate your electronic designs with the 1N4803 Varactor Diode by Onsemi. With a minimum quality factor of 15, this diode offers precise and reliable performance. Manufactured by Onsemi, a trusted industry leader, this diode is ideal for applications requiring variable capacitance, such as frequency tuning and voltage-controlled oscillators. Experience superior quality and efficiency with the 1N4803, delivering unparalleled value and benefits to customers seeking top-notch components for their projects.

Feature Benefit Bullets

Minimum Quality Factor: 15

Higher quality factor indicates better performance and reliability of the varactor diode.

Package Body Material: GLASS

Glass package material provides durability and stability to the varactor diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration of the varactor diode.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures precise and fast variable capacitance response of the diode.

Maximum Reverse Current: 0.000000005 uA

Low reverse current minimizes power loss and enhances efficiency of the varactor diode.

Package Shape: ROUND

Round package shape enables easy mounting and installation of the varactor diode in various applications.

Reverse Test Voltage: 100 V

The high reverse test voltage ensures the reliability and safety of the varactor diode during operation.

No. of Terminals: 2

Two terminals allow for easy connection and integration of the varactor diode into the circuit.

Package Style (Meter): LONG FORM

Long-form package style provides versatility and compatibility for different circuit designs and layouts.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the varactor diode to perform in a wide range of temperature conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the varactor diode can operate in cold environments without any issues.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and connection reliability for the varactor diode.

Terminal Position: AXIAL

Axial terminal position simplifies installation and connection of the varactor diode in the circuit.

Case Connection: ISOLATED

Isolated case connection enhances the safety and stability of the varactor diode during operation.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation rating allows the varactor diode to handle power efficiently without overheating.

Nominal Diode Capacitance: 10 pF

The nominal capacitance value ensures the varactor diode can meet the required capacitance specifications in the circuit.

Minimum Breakdown Voltage: 110 V

The high minimum breakdown voltage protects the varactor diode from voltage spikes and ensures its reliability under high voltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it provides precise and adjustable capacitance for various circuit applications.

Terminal Form: WIRE

Wire terminal form facilitates easy connection and integration of the varactor diode into the circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high maximum repetitive peak reverse voltage ensures the varactor diode can withstand reverse voltage without breakdown.

Diode Cap Tolerance: 20 %

The 20% capacitance tolerance ensures the varactor diode can provide accurate capacitance values within specified limits.

Diode Element Material: SILICON

Silicon diode element material offers high performance, reliability, and stability to the varactor diode.

Minimum Diode Capacitance Ratio: 2.34

The minimum capacitance ratio ensures the varactor diode can provide the required variable capacitance for different circuit applications.

Technical Specifications

Varactor Diodes 1N4803 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

110 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.34

Nominal Diode Capacitance:

10 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

100 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4803 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20