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1N4805

Onsemi

1N4805 by Onsemi

1N4805 by Onsemi is a varactor diode with 15 pF nominal capacitance, 110 V breakdown voltage, and 0.000000005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,786 parts In-Stock

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Vyrian

USA . 625 parts In-Stock

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Native Components

USA . 116 parts In-Stock

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$15.570

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Northwest PG Solutions

USA . 2,008 parts In-Stock

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$17.127

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$15.414

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Kulean Microsystems

USA . 7,360 parts In-Stock

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TANS Electronics

Latvia . 6,563 parts In-Stock

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Problanco Electronics

Mexico . 4,023 parts In-Stock

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Corphita

USA . 2,418 parts In-Stock

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SupplyDigital Components

Austria . 2,244 parts In-Stock

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Corohmni

South Africa . 475 parts In-Stock

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UHIMA Technologies

Türkiye . 163 parts In-Stock

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Overview

Unlock a world of possibilities with the 1N4805 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi offers cutting-edge technology in the field of variable capacitance diodes. Ideal for applications requiring precise tuning and frequency control, this diode is designed to provide consistent performance and enhanced signal processing capabilities. Whether you're in the telecommunications, aerospace, or automotive industry, the 1N4805 is sure to deliver unmatched value and efficiency, making it the perfect choice for your next project. Experience the difference with Onsemi's innovative solutions today!

Feature Benefit Bullets

Minimum Quality Factor: 15

A higher quality factor indicates better performance and efficiency in frequency control applications.

Package Body Material: GLASS

Glass material provides better thermal stability and reliability for the varactor diode.

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer sharper tuning characteristics for precise frequency control.

Maximum Reverse Current: 0.000000005 uA

Low reverse current ensures minimal power loss and improves overall efficiency.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into various electronic systems.

Reverse Test Voltage: 100 V

High reverse test voltage provides robustness and reliability in diverse operating conditions.

No. of Terminals: 2

Two terminals offer simple connectivity and ease of installation.

Package Style (Meter): LONG FORM

Long form package style provides ample space for additional components in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in harsh environments.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows for versatile applications across different temperature conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and long-term reliability.

Terminal Position: AXIAL

Axial terminal position facilitates easy insertion and soldering into circuit boards.

Case Connection: ISOLATED

Isolated case connection improves signal isolation and prevents interference in the circuit.

Maximum Power Dissipation: 0.5 W

High power dissipation capability allows for handling of increased power levels without failure.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value of 15 pF ensures optimal performance in frequency control applications.

Minimum Breakdown Voltage: 110 V

High minimum breakdown voltage prevents damage from voltage spikes and surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type enables precise tuning and frequency control in electronic circuits.

Terminal Form: WIRE

Wire terminal form allows for easy connection and soldering in the circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage ensures protection against reverse voltage conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of +/- 20% provides flexibility and accuracy in circuit design.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and low leakage current for optimal performance.

Minimum Diode Capacitance Ratio: 2.37

Higher diode capacitance ratio allows for wider tuning range and precise frequency control.

Technical Specifications

Varactor Diodes 1N4805 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

110 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.37

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

100 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4805 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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