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1N4809

Onsemi

1N4809 by Onsemi

1N4809 by Onsemi is a varactor diode with 33pF nominal capacitance, abrupt variable capacitance classification, and 60V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor of 15 and low max reverse current of 0.005uA.

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Vyrian

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USA . 2,213 parts In-Stock

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TANS Electronics

Latvia . 7,200 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Overview

Upgrade your electronic projects with the 1N4809 Varactor Diode from Onsemi, known for their exceptional quality and reliability. These diodes offer a wide range of applications, providing variable capacitance to enhance tuning capabilities. With a high minimum quality factor of 15 and a low reverse current of 0.005 uA, this diode ensures optimal performance in any circuit. Trust Onsemi to deliver top-notch components that bring value, benefits, and advantages to your designs. Elevate your projects with the 1N4809 Varactor Diode today!

Feature Benefit Bullets

Minimum Quality Factor: 15

A higher quality factor indicates better performance and efficiency in the varactor diode, making it a reliable choice for various applications.

Package Body Material: GLASS

Glass packaging provides durability and protection to the varactor diode, ensuring longevity and stable performance.

Config: SINGLE

Single configuration simplifies the design and installation process, making the varactor diode easy to use in different circuits.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification allows for quick and precise changes in capacitance, providing flexibility in tuning circuits for optimal performance.

Maximum Reverse Current: 0.005 uA

Low reverse current minimizes power loss and ensures efficient operation of the varactor diode in various electronic applications.

Package Shape: ROUND

Round shape packaging is compact and suitable for space-constrained environments, making the varactor diode ideal for compact circuit designs.

Reverse Test Voltage: 60 V

The high reverse test voltage rating ensures the varactor diode can withstand voltage spikes and transient events, enhancing its reliability.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces the risk of incorrect wiring, making the varactor diode user-friendly.

Package Style (Meter): LONG FORM

The long form package style allows for easy integration into circuit boards and equipment, providing convenience in installation and maintenance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the varactor diode can operate reliably in a wide range of environments and applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature rating ensures the varactor diode can function in extreme cold conditions, adding versatility to its usage.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring reliable electrical connections and stable performance of the varactor diode.

Terminal Position: AXIAL

Axial terminal position makes it easy to insert and secure the varactor diode in circuits, facilitating efficient and hassle-free installation.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures signal integrity, making the varactor diode suitable for high-frequency applications.

Maximum Power Dissipation: 0.5 W

The high power dissipation rating allows the varactor diode to handle higher power levels without overheating, ensuring reliable operation in demanding applications.

Nominal Diode Capacitance: 33 pF

The nominal capacitance value indicates the varactor diode's ability to tune circuits accurately and effectively, making it a versatile choice for frequency modulation.

Minimum Breakdown Voltage: 66 V

The high minimum breakdown voltage ensures protection against voltage surges and spikes, enhancing the durability and reliability of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

The varactor diode's variable capacitance property allows for frequency modulation and tuning in various RF and microwave applications, making it a versatile component.

Terminal Form: WIRE

Wire terminal form offers easy connection and secure attachment in circuits, ensuring reliable performance and ease of maintenance for the varactor diode.

Maximum Repetitive Peak Reverse Voltage: 60 V

The high repetitive peak reverse voltage rating ensures the varactor diode can handle voltage fluctuations and transient events, enhancing its robustness.

Diode Cap Tolerance: 20 %

The 20% capacitance tolerance allows for flexibility in circuit design and tuning, providing room for adjustments and optimizing performance with the varactor diode.

Diode Element Material: SILICON

Silicon diode element material offers reliable and stable performance in various temperature and voltage conditions, making the varactor diode a durable choice.

Minimum Diode Capacitance Ratio: 2.35

The minimum capacitance ratio indicates the varactor diode's ability to adjust capacitance levels for precise tuning and modulation in RF and microwave circuits.

Technical Specifications

Varactor Diodes 1N4809 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

66 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.35

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4809 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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