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1N5703

Onsemi

1N5703 by Onsemi

1N5703 by Onsemi is a varactor diode with 27pF nominal capacitance, abrupt variable capacitance classification, and 65V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 350 and low reverse current of 0.00000002uA.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

USA . 463 parts In-Stock

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Native Components

USA . 745 parts In-Stock

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$0.160

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$0.154

745

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$0.154

Northwest PG Solutions

USA . 1,240 parts In-Stock

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$0.176

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Problanco Electronics

Mexico . 6,628 parts In-Stock

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SupplyDigital Components

Austria . 6,269 parts In-Stock

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Kulean Microsystems

USA . 3,988 parts In-Stock

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TANS Electronics

Latvia . 3,855 parts In-Stock

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Corphita

USA . 1,800 parts In-Stock

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UHIMA Technologies

Türkiye . 497 parts In-Stock

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Corohmni

South Africa . 467 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 1N5703 Varactor Diode. Crafted by a trusted manufacturer, this diode offers superior quality and reliability for a wide range of applications. Whether you're looking to enhance signal processing or improve frequency tuning, this diode delivers exceptional performance with its variable capacitance and low reverse current. Experience seamless operation in extreme temperatures and maximize your system's efficiency with the Onsemi 1N5703. Elevate your projects with this cutting-edge technology that promises value, benefits, and unparalleled advantages.

Feature Benefit Bullets

Minimum Quality Factor: 350

Higher quality factor indicates better performance and efficiency in terms of signal processing and frequency tuning.

Package Body Material: GLASS

Glass packaging provides durability and protection for the diode, ensuring long-term reliability and stability.

Config: SINGLE

Single configuration simplifies the design and integration of the diode into electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification allows for precise and quick changes in capacitance, making it suitable for frequency-modulated circuits.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and high efficiency in the diode operation.

Package Shape: ROUND

Round shape provides easy handling and installation of the diode in various electronic devices.

Reverse Test Voltage: 60 V

High reverse test voltage ensures reliable operation and protection against reverse voltage breakdown.

No. of Terminals: 2

Two terminals simplify the connection and installation of the diode in electronic circuits.

Package Style (Meter): LONG FORM

Long form packaging allows for clear labeling and identification of the diode, enhancing usability.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures stable performance in a wide range of environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for reliable performance even in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin-lead terminal finish offers good solderability and conductivity for easy connection in electronic circuits.

Terminal Position: AXIAL

Axial terminal position simplifies the orientation and alignment of the diode during installation.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures stable performance in high-frequency applications.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation allows for efficient performance and handling of power in the diode.

Nominal Diode Capacitance: 27 pF

Nominal capacitance value indicates the diode's ability to store and release charge, essential for frequency tuning.

Minimum Breakdown Voltage: 65 V

High minimum breakdown voltage ensures protection against voltage spikes and overloads, enhancing the diode's durability.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers flexibility in tuning and adjusting capacitance values for various electronic applications.

Terminal Form: WIRE

Wire terminal form provides secure connection and flexibility in installation of the diode in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage ensures safe operation and stability in reverse-bias conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for accurate and reliable performance in different operating conditions.

Diode Element Material: SILICON

Silicon element material offers high stability, efficiency, and reliability in the diode's performance.

Minimum Diode Capacitance Ratio: 3.2

Minimum capacitance ratio of 3.2 indicates the diode's ability to provide precise and consistent capacitance values for signal processing.

Technical Specifications

Varactor Diodes 1N5703 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5703 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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