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SVC384S

Onsemi

SVC384S by Onsemi

The Onsemi SVC384S is a Varactor Diode with 2 elements, common cathode config, and 33V breakdown voltage. It has a min quality factor of 200 and operates up to 125 °C. Ideal for applications requiring variable capacitance diodes in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,320 parts In-Stock

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Digiode

USA . 549 parts In-Stock

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549

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SupplyDigital Components

Austria . 7,560 parts In-Stock

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TANS Electronics

Latvia . 5,865 parts In-Stock

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Corphita

USA . 2,319 parts In-Stock

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Kulean Microsystems

USA . 2,096 parts In-Stock

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Problanco Electronics

Mexico . 1,125 parts In-Stock

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UHIMA Technologies

Türkiye . 307 parts In-Stock

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Corohmni

South Africa . 153 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the SVC384S Varactor Diode by Onsemi. With a minimum quality factor of 200 and a common cathode configuration, this high-quality diode offers superior performance and reliability. Ideal for applications requiring variable capacitance, such as voltage-controlled oscillators and frequency modulators, the SVC384S provides precise tuning capabilities and stable operation. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Upgrade your designs with the SVC384S and experience the difference in quality and performance.

Feature Benefit Bullets

Minimum Quality Factor: 200

This high quality factor ensures efficient and reliable operation of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the diode.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy and flexible circuit integration.

Package Shape: RECTANGULAR

Rectangular package shape facilitates efficient mounting and handling of the diode.

No. of Terminals: 3

Having 3 terminals allows for better connectivity and functionality in a circuit.

Package Style (Meter): IN-LINE

The in-line package style makes installation and maintenance of the diode convenient.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this diode can withstand high temperature environments.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation process.

Minimum Breakdown Voltage: 33 V

The minimum breakdown voltage of 33V ensures protection against voltage surges and spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers tunable capacitance for various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and stable soldering connection.

No. of Elements: 2

Having 2 elements allows for flexibility in circuit design and applications.

Maximum Repetitive Peak Reverse Voltage: 33 V

The maximum repetitive peak reverse voltage of 33V ensures protection against reverse current.

Diode Cap Tolerance: 3.31 %

Low diode capacitance tolerance ensures accurate and consistent performance.

Diode Element Material: SILICON

Silicon material used in the diode element provides reliable and stable operation.

Minimum Diode Capacitance Ratio: 17.5

The minimum diode capacitance ratio of 17.5 provides a wide range of tunability for capacitance.

Technical Specifications

Varactor Diodes SVC384S attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

33 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

3.31 %

Minimum Diode Capacitance Ratio:

17.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-T3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

33 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC384S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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