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1N4811

Onsemi

1N4811 by Onsemi

1N4811 by Onsemi is a varactor diode with 47pF nominal capacitance, abrupt variable capacitance classification, and 55V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.000000005uA.

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USA . 243 parts In-Stock

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Kulean Microsystems

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Overview

Unlock a world of possibilities with the 1N4811 Varactor Diode from Onsemi. Known for their top-quality components, Onsemi has crafted a diode that offers exceptional performance and reliability. Ideal for a wide range of applications, this diode boasts a high minimum quality factor and variable capacitance classification, making it perfect for demanding projects. With its reliable construction and impressive capabilities, the 1N4811 is sure to add value and efficiency to your designs. Trust Onsemi for all your semiconductor needs.

Feature Benefit Bullets

Minimum Quality Factor: 15

Higher quality factor indicates better performance and stability in radio frequency applications.

Package Body Material: GLASS

Glass package offers good protection and heat dissipation for the diode, ensuring durability and reliability.

Config: SINGLE

Single configuration makes it easy to integrate into circuit designs without complications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification allows for precise and rapid changes in capacitance, making it ideal for frequency tuning circuits.

Maximum Reverse Current: 0.000000005 uA

Low reverse current ensures minimal power loss and efficient performance.

Package Shape: ROUND

Round shape simplifies mounting and soldering processes, enabling easy integration into various circuit layouts.

Reverse Test Voltage: 50 V

A high reverse test voltage capacity indicates robustness and resilience against voltage spikes in the circuit.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring and connection process, reducing chances of errors in circuit design.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for stable performance even in demanding environmental conditions.

Minimum Operating Temperature: -65 °C

Wide operating temperature range ensures functionality in both extreme hot and cold environments.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability, enhancing the performance and reliability of the diode.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5W, the diode can handle moderate power levels without overheating.

Nominal Diode Capacitance: 47 pF

Nominal capacitance value of 47pF offers good tuning capabilities for RF circuits, allowing for precise frequency adjustments.

Minimum Breakdown Voltage: 55 V

Higher minimum breakdown voltage ensures protection against voltage surges and enhances the durability of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type enables frequency modulation and tuning, making it suitable for radio frequency applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

High maximum repetitive peak reverse voltage rating ensures protection against reverse voltage spikes, enhancing the diode's longevity.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for some variation in capacitance values, providing flexibility in circuit design.

Diode Element Material: SILICON

Silicon material offers good performance characteristics and reliability in electronic applications.

Minimum Diode Capacitance Ratio: 2.33

Minimum capacitance ratio of 2.33 indicates a wide range of capacitance values for frequency tuning, offering versatility in circuit designs.

Technical Specifications

Varactor Diodes 1N4811 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

55 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.33

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

50 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4811 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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