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1N4810

Onsemi

1N4810 by Onsemi

1N4810 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 61V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 15 and low reverse current of 0.005uA.

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Northwest PG Solutions

USA . 2,266 parts In-Stock

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Problanco Electronics

Mexico . 6,785 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Overview

Elevate your electronic projects with the 1N4810 Varactor Diode by Onsemi. Crafted with precision and quality, this diode offers a minimal reverse current, maximum power dissipation of 0.5W, and a wide operating temperature range from -65 °C to 150°C. Ideal for applications that require variable capacitance, such as voltage-controlled oscillators and frequency multipliers, the 1N4810 delivers superior performance and reliability. Trust in Onsemi's reputation for excellence and choose the 1N4810 to bring your designs to the next level.

Feature Benefit Bullets

Minimum Quality Factor: 15

Higher quality factor indicates better performance and efficiency in signal processing applications.

Package Body Material: GLASS

Glass packaging provides durability and stability especially in harsh environmental conditions.

Config: SINGLE

Single configuration simplifies the setup and integration of the varactor diode into electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification offers precise and sharp capacitance response for accurate tuning and frequency control.

Maximum Reverse Current: 0.005 uA

Low reverse current ensures minimal power consumption and enhances overall efficiency of the varactor diode.

Package Shape: ROUND

Round shape facilitates easy handling and mounting of the varactor diode in circuit boards.

Reverse Test Voltage: 55 V

Safely operates at high reverse voltage, providing reliable performance in various electronic applications.

No. of Terminals: 2

Simple two-terminal design simplifies circuit connections and reduces complexity in circuit layouts.

Package Style (Meter): LONG FORM

Long form package allows for efficient heat dissipation and helps maintain stable performance over extended periods.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliability and stability in demanding operating conditions.

Minimum Operating Temperature: -65 °C

Wide temperature range makes this varactor diode suitable for use in both hot and cold environments.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures secure electrical connections in circuit applications.

Terminal Position: AXIAL

Axial terminal position simplifies installation and allows for easy alignment in circuit assemblies.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and enhances the stability of the varactor diode in circuits.

Maximum Power Dissipation: 0.5 W

With a high power dissipation rating, this varactor diode can handle moderate power levels without overheating.

Nominal Diode Capacitance: 39 pF

Optimal capacitance value for various tuning and frequency control applications in electronic circuits.

Minimum Breakdown Voltage: 61 V

Higher breakdown voltage ensures reliable operation and protects the varactor diode from voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for precise tuning and frequency control in electronic circuits.

Terminal Form: WIRE

Wire terminal form offers easy connection and flexibility in circuit designs for the varactor diode.

Maximum Repetitive Peak Reverse Voltage: 55 V

With a high repetitive peak reverse voltage, this varactor diode can handle voltage fluctuations without damage.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides flexibility in circuit designs and ensures reliable performance in varying conditions.

Diode Element Material: SILICON

Silicon material offers good stability, reliability, and performance for the varactor diode in electronic applications.

Minimum Diode Capacitance Ratio: 2.34

Higher capacitance ratio allows for precise frequency tuning and control in electronic circuits.

Technical Specifications

Varactor Diodes 1N4810 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

61 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.34

Nominal Diode Capacitance:

39 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

55 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

55 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4810 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-416-4849, 5961004164849, 5961-00-780-8367, 5961007808367

NIIN

004164849, 007808367

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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