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1N4814

Onsemi

1N4814 by Onsemi

1N4814 by Onsemi is a varactor diode with 82pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.000000005uA and high breakdown voltage of 22V.

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Overview

Unlock new possibilities with the 1N4814 Varactor Diode from Onsemi, a leading manufacturer known for its quality and reliability. Ideal for applications requiring variable capacitance, this diode offers a minimum quality factor of 15 and a nominal capacitance of 82 pF. With its high performance and wide operating temperature range, this diode provides unmatched value and benefits to customers in industries such as telecommunications, radar systems, and frequency modulators. Trust Onsemi's expertise and innovation to take your projects to the next level with the 1N4814 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 15

A higher quality factor indicates better performance and stability in various applications, making this varactor diode a reliable choice.

Package Body Material: GLASS

Glass package body material provides good thermal and electrical insulation, ensuring the safety and reliability of the diode.

Config: SINGLE

Single configuration simplifies the design and integration process, making it easier to incorporate this varactor diode into different systems.

Variable Capacitance Diode Classification: ABRUPT

The abrupt variable capacitance diode classification offers precise and rapid changes in capacitance, enhancing the overall performance of the diode.

Maximum Reverse Current: 0.000000005 uA

Low maximum reverse current ensures minimal power loss and improved efficiency in the circuit where this diode is used.

Package Shape: ROUND

Round package shape allows for easy installation and mounting, making it a versatile choice for different applications.

Reverse Test Voltage: 20 V

With a high reverse test voltage, this varactor diode can withstand voltage spikes and reverse voltage conditions without damage.

No. of Terminals: 2

Two terminals simplify the connection process and offer compatibility with various circuit layouts and designs.

Package Style (Meter): LONG FORM

Long form package style provides ample space for proper heat dissipation and allows for easy identification and handling.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding environments with elevated temperatures.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature range makes this varactor diode suitable for use in extreme cold conditions without compromising performance.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity, ensuring secure connections and low contact resistance.

Terminal Position: AXIAL

Axial terminal position allows for easy installation and alignment in the circuit, simplifying the assembly process.

Case Connection: ISOLATED

Isolated case connection reduces the risk of short circuits and interference, enhancing the overall safety and reliability of the diode.

Maximum Power Dissipation: 0.5 W

With a high maximum power dissipation rating, this varactor diode can handle power efficiently and operate reliably under varying load conditions.

Nominal Diode Capacitance: 82 pF

The nominal capacitance value of 82 pF offers optimal performance and versatility for a wide range of applications that require variable capacitance.

Minimum Breakdown Voltage: 22 V

High minimum breakdown voltage ensures protection against voltage surges and overloads, enhancing the durability and longevity of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels, making it suitable for various tuning and frequency control applications.

Terminal Form: WIRE

Wire terminal form provides flexibility in connection options and allows for easy integration into different circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 20 V

High maximum repetitive peak reverse voltage ensures reliable operation under reverse voltage conditions, making this diode suitable for demanding applications.

Diode Cap Tolerance: 20 %

The 20% tolerance allows for variations in capacitance levels, providing flexibility in tuning and customizing the diode for specific application requirements.

Diode Element Material: SILICON

Silicon diode element material offers high performance, reliability, and durability, ensuring long-term functionality and stability.

Minimum Diode Capacitance Ratio: 2.26

A higher minimum capacitance ratio indicates better tuning capabilities and versatility in frequency control applications, making this varactor diode a versatile choice.

Technical Specifications

Varactor Diodes 1N4814 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

22 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.26

Nominal Diode Capacitance:

82 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4814 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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