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1N4807

Onsemi

1N4807 by Onsemi

1N4807 by Onsemi is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.000000005 uA, and Nominal Diode Capacitance of 22 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a max operating temperature of 150 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

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ECAB

Sweden . 70 parts In-Stock

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TANS Electronics

Latvia . 7,116 parts In-Stock

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SupplyDigital Components

Austria . 5,320 parts In-Stock

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Problanco Electronics

Mexico . 4,412 parts In-Stock

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Northwest PG Solutions

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Native Components

USA . 926 parts In-Stock

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Kulean Microsystems

USA . 858 parts In-Stock

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UHIMA Technologies

Türkiye . 794 parts In-Stock

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Corphita

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Corohmni

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Overview

Enhance your electronic designs with the 1N4807 Varactor Diode by Onsemi. With a focus on quality and precision, Onsemi delivers reliable components that meet the highest standards in the industry. Ideal for applications requiring variable capacitance, this diode offers unparalleled performance with a minimum quality factor of 15 and a nominal capacitance of 22 pF. Whether you're working on RF tuning circuits or voltage-controlled oscillators, the 1N4807 provides the value, benefits, and advantages you need to bring your projects to life. Trust Onsemi for superior components that elevate your designs to the next level.

Feature Benefit Bullets

Minimum Quality Factor: 15

A higher quality factor indicates better overall performance and efficiency, making this varactor diode a reliable choice for various applications.

Package Body Material: GLASS

Glass is known for its durability and reliability, ensuring a long lifespan for the varactor diode.

Config: SINGLE

The single configuration simplifies the circuit design and reduces complexity, making it easier to integrate into electronic systems.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification indicates precise and quick changes in capacitance, providing accurate tuning capabilities for different frequencies.

Maximum Reverse Current: 0.000000005 uA

The low reverse current minimizes power loss and improves the overall efficiency of the varactor diode.

Package Shape: ROUND

The round shape allows for easy mounting and integration into circuits, making it a versatile component for various applications.

Reverse Test Voltage: 90 V

The high reverse test voltage tolerance ensures the varactor diode can withstand voltage spikes and variations without damage.

No. of Terminals: 2

Having two terminals simplifies the connection process and reduces the chance of errors during installation or replacement.

Package Style (Meter): LONG FORM

The long form package style provides additional protection and stability for the varactor diode, making it suitable for harsh operating environments.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand high temperature conditions without compromising performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures that the varactor diode remains functional even in extreme cold environments.

Terminal Finish: TIN LEAD

The tin lead finish provides good solderability and ensures a secure connection, improving the reliability of the varactor diode.

Terminal Position: AXIAL

The axial terminal position simplifies the installation process and ensures proper alignment in the circuit.

Case Connection: ISOLATED

The isolated case connection prevents interference and ensures stable performance, making it suitable for sensitive electronic applications.

Maximum Power Dissipation: 0.5 W

The high power dissipation capability allows the varactor diode to handle increased power levels without overheating or damage.

Nominal Diode Capacitance: 22 pF

The 22 pF capacitance value indicates the range of capacitance the varactor diode can achieve, offering flexibility in tuning different frequencies.

Minimum Breakdown Voltage: 99 V

The high minimum breakdown voltage provides protection against voltage spikes and ensures the varactor diode remains operational under high voltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers tunable capacitance levels for frequency modulation and signal processing applications.

Terminal Form: WIRE

The wire terminal form simplifies the connection process and allows for easy integration into existing circuits or systems.

Maximum Repetitive Peak Reverse Voltage: 90 V

The high repetitive peak reverse voltage tolerance ensures the varactor diode can handle fluctuating voltages without damage.

Diode Cap Tolerance: 20 %

The 20% capacitance tolerance provides a reliable range of capacitance values for precise tuning and modulation requirements.

Diode Element Material: SILICON

Silicon is a commonly used material for diode elements due to its reliability, performance, and efficiency, making this varactor diode a durable choice.

Minimum Diode Capacitance Ratio: 2.35

The minimum capacitance ratio indicates the range of capacitance levels the varactor diode can achieve, offering versatile tuning options for various frequency ranges.

Technical Specifications

Varactor Diodes 1N4807 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

99 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.35

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

90 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4807 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

2910-99-764-5128, 2910997645128, 5961-00-220-3529, 5961002203529, 5961-00-868-5944, 5961008685944

NIIN

997645128, 002203529, 008685944

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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