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LV2209ZL1

Onsemi

LV2209ZL1 by Onsemi

LV2209ZL1 by Onsemi is a single varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 25V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,548 parts In-Stock

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Digiode

USA . 207 parts In-Stock

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Problanco Electronics

Mexico . 6,481 parts In-Stock

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Kulean Microsystems

USA . 5,959 parts In-Stock

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TANS Electronics

Latvia . 4,646 parts In-Stock

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SupplyDigital Components

Austria . 2,100 parts In-Stock

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Corphita

USA . 1,178 parts In-Stock

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Corohmni

South Africa . 442 parts In-Stock

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the LV2209ZL1 Varactor Diode by Onsemi. With a minimum quality factor of 200, this diode offers superior performance and reliability. The plastic/epoxy package ensures durability, while the variable capacitance feature allows for flexible tuning in a variety of applications. Whether you're working on RF circuits, voltage-controlled oscillators, or frequency modulators, this diode delivers exceptional value and precision. Experience the difference with Onsemi's trusted manufacturing and cutting-edge technology.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor ensures better performance and stability in RF applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability in various environmental conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Package Shape: ROUND

Round shape allows for easier mounting and handling in electronic circuits.

No. of Terminals: 2

Two terminals enable straightforward connections in the circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers space-saving and compatibility with standard meter designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability even in demanding conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and electrical conductivity.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering.

Maximum Power Dissipation: 0.28 W

Higher maximum power dissipation enables handling of higher power levels without damage.

Nominal Diode Capacitance: 33 pF

Optimal capacitance value for various tuning and frequency control applications.

Minimum Breakdown Voltage: 25 V

High breakdown voltage ensures protection against voltage spikes and overloads.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance feature allows for flexible tuning and frequency control in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form offers easy and secure mounting on PCBs.

Diode Cap Tolerance: 10 %

Tight capacitance tolerance ensures consistent performance in different applications.

Diode Element Material: SILICON

Silicon material provides reliability and stability in diode operation.

Minimum Diode Capacitance Ratio: 2.5

Higher minimum capacitance ratio allows for greater tuning range and flexibility in applications.

Technical Specifications

Varactor Diodes LV2209ZL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2209ZL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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