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LV2205RL

Onsemi

LV2205RL by Onsemi

LV2205RL by Onsemi is a Varactor Diode with 15pF capacitance, 25V breakdown voltage, and 400 min quality factor. It is ideal for applications requiring variable capacitance diodes in temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,944 parts In-Stock

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Vyrian

USA . 1,722 parts In-Stock

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SupplyDigital Components

Austria . 5,997 parts In-Stock

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Kulean Microsystems

USA . 5,936 parts In-Stock

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TANS Electronics

Latvia . 2,892 parts In-Stock

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Problanco Electronics

Mexico . 2,860 parts In-Stock

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UHIMA Technologies

Türkiye . 286 parts In-Stock

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Corohmni

South Africa . 275 parts In-Stock

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Corphita

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Overview

Unlock limitless possibilities with the LV2205RL Varactor Diode by Onsemi. Crafted with precision and quality in mind, this diode offers a minimum Quality Factor of 400, providing superior performance in a variety of applications. From voltage-controlled oscillators to frequency multipliers, this diode's variable capacitance allows for flexibility and customization, making it a valuable asset for any project. Trust in Onsemi's reputation for excellence and innovation as you explore the endless benefits and advantages that the LV2205RL has to offer.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures excellent performance and stability in RF applications.

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package offers good protection and durability, making the product suitable for various environments.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Package Shape: ROUND

Round shape ensures easy installation and compatibility with standard setups.

No. of Terminals: 2

Having only 2 terminals simplifies connection and reduces complexity in circuit layout.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for efficient heat dissipation and mechanical strength.

Maximum Operating Temperature: 150 °C

High operating temperature range provides versatility and reliability in different operating conditions.

Terminal Finish: TIN LEAD

Tin Lead terminal finish ensures good solderability and conductivity.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and connection.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, the diode can handle power efficiently without overheating.

Nominal Diode Capacitance: 15 pF

Low nominal capacitance allows for fast switching speeds and efficient RF signal processing.

Minimum Breakdown Voltage: 25 V

High minimum breakdown voltage ensures reliability and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers flexibility in tuning and adjusting capacitance in RF circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure mechanical connection and ease of soldering.

Diode Cap Tolerance: 10 %

Tight capacitance tolerance allows for precise control and consistency in circuit performance.

Diode Element Material: SILICON

Silicon diode element material ensures high reliability and performance in various operating conditions.

Minimum Diode Capacitance Ratio: 2.5

High minimum capacitance ratio provides a wide range of capacitance variation for tuning applications.

Technical Specifications

Varactor Diodes LV2205RL attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2205RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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