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LV2209RLRM

Onsemi

LV2209RLRM by Onsemi

LV2209RLRM by Onsemi is a varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for RF tuning applications in various electronic devices. With a breakdown voltage of 25V and power dissipation of 0.28W, it offers reliable performance in signal modulation circuits.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 551 parts In-Stock

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USA . 8,384 parts In-Stock

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SupplyDigital Components

Austria . 7,232 parts In-Stock

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Problanco Electronics

Mexico . 4,537 parts In-Stock

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TANS Electronics

Latvia . 3,965 parts In-Stock

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Corphita

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South Africa . 482 parts In-Stock

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UHIMA Technologies

Türkiye . 85 parts In-Stock

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Overview

Unlock endless possibilities with the LV2209RLRM Varactor Diode by Onsemi. Designed with precision and quality in mind, this diode offers a minimum quality factor of 200, ensuring optimal performance in a variety of applications. With a single configuration and round package shape, this diode is perfect for applications requiring variable capacitance. Whether you're working on telecommunications, radar systems, or voltage-controlled oscillators, the LV2209RLRM guarantees reliability and efficiency. Trust Onsemi's expertise to deliver top-notch products that exceed expectations. Elevate your projects with the LV2209RLRM Varactor Diode today.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency in tuning applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as body material provides good insulation and protection for the diode.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Package Shape: ROUND

Round shape offers easy and secure mounting in various applications.

Number of Terminals: 2

Having 2 terminals allows for straightforward connection in circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is commonly used and compatible with different setups.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand demanding conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier installation and connection.

Maximum Power Dissipation: 0.28 W

Capability to dissipate up to 0.28W of power ensures reliable performance under load.

Nominal Diode Capacitance: 33 pF

The specified capacitance value is suitable for various tuning and frequency control applications.

Minimum Breakdown Voltage: 25 V

A higher breakdown voltage ensures the diode can handle higher reverse voltages safely.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for adjustable capacitance, making it versatile for tuning purposes.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure mounting and easy assembly on circuit boards.

Diode Capacitance Tolerance: 10 %

Capacitance tolerance of 10% ensures consistency in performance and tuning accuracy.

Diode Element Material: SILICON

Silicon as the diode element material offers stability and reliability in operation.

Minimum Diode Capacitance Ratio: 2.5

The specified minimum capacitance ratio indicates the range over which the capacitance can vary in tuning applications.

Technical Specifications

Varactor Diodes LV2209RLRM attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2209RLRM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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