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LV2205RLRM

Onsemi

LV2205RLRM by Onsemi

LV2205RLRM by Onsemi is a single varactor diode with a min quality factor of 400, ideal for applications requiring variable capacitance. With a nominal capacitance of 15 pF and a min breakdown voltage of 25 V, this diode operates at temperatures up to 150 °C, making it suitable for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,181 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 5,963 parts In-Stock

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TANS Electronics

Latvia . 2,355 parts In-Stock

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Corphita

USA . 1,555 parts In-Stock

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Problanco Electronics

Mexico . 1,126 parts In-Stock

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SupplyDigital Components

Austria . 992 parts In-Stock

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UHIMA Technologies

Türkiye . 818 parts In-Stock

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Corohmni

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Overview

Unleash the power of innovation with the LV2205RLRM Varactor Diode by Onsemi! Designed with top-tier quality and precision, this single-config diode offers a minimum quality factor of 400 and a breakthrough nominal capacitance ratio of 2.5. Perfect for applications requiring variable capacitance, this diode is built to excel in demanding environments with a maximum operating temperature of 150 °C. Elevate your projects with Onsemi's cutting-edge technology and experience the superior performance and reliability that comes with the LV2205RLRM.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures minimal signal loss and maximum efficiency, making this varactor diode suitable for high-performance applications.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and protection for the diode, ensuring long-term reliability in various operating conditions.

Config: SINGLE

Single configuration simplifies the setup and integration of the varactor diode in electronic circuits, making it user-friendly and easy to work with.

Package Shape: ROUND

Round package shape allows for easy mounting and placement within circuit boards, optimizing space utilization and enabling efficient layout design.

No. of Terminals: 2

Having two terminals simplifies the connection process and reduces the likelihood of errors during installation, making the diode more user-friendly.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides mechanical stability and ease of handling, facilitating assembly and maintenance processes for the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows the varactor diode to function effectively in demanding environments without compromising performance or reliability.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, enabling secure and reliable connections with other components in the circuit.

Terminal Position: BOTTOM

Bottom terminal position makes it convenient to mount and secure the diode on the circuit board, ensuring stability and ease of integration.

Maximum Power Dissipation: 0.28 W

High maximum power dissipation capability allows the varactor diode to handle increased power levels, making it suitable for demanding applications that require higher performance.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value of 15 pF indicates the ability of the diode to store charge efficiently, enabling precise tuning and adjustment in electronic circuits.

Minimum Breakdown Voltage: 25 V

Minimum breakdown voltage of 25 V ensures the diode can withstand high voltage levels without failing, enhancing the overall robustness and reliability of the product.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for dynamic adjustment of capacitance according to the application requirements, offering flexibility and versatility in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminal form simplifies the mounting process and provides secure connections, enhancing the overall stability and durability of the varactor diode in the circuit.

Diode Cap Tolerance: 10 %

Tolerance of 10% in capacitance ensures consistency and accuracy in performance, allowing for precise tuning and control in electronic applications.

Diode Element Material: SILICON

Utilizing silicon as the element material ensures reliability and stable performance over time, making the varactor diode a durable and dependable component in electronic systems.

Minimum Diode Capacitance Ratio: 2.5

Minimum capacitance ratio of 2.5 indicates the range of capacitance adjustment capability, offering versatility and fine-tuning options in various circuit configurations.

Technical Specifications

Varactor Diodes LV2205RLRM attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2205RLRM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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