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LV2205RLRA

Onsemi

LV2205RLRA by Onsemi

LV2205RLRA by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and a breakdown voltage of 25 V. It is ideal for applications requiring variable capacitance in electronic circuits due to its high-quality performance and temperature range up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,366 parts In-Stock

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Digiode

USA . 695 parts In-Stock

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695

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SupplyDigital Components

Austria . 6,628 parts In-Stock

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6,628

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TANS Electronics

Latvia . 6,598 parts In-Stock

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Problanco Electronics

Mexico . 5,728 parts In-Stock

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Kulean Microsystems

USA . 4,150 parts In-Stock

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4,150

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Corphita

USA . 2,328 parts In-Stock

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UHIMA Technologies

Türkiye . 750 parts In-Stock

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750

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Corohmni

South Africa . 132 parts In-Stock

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Overview

Enhance your electronic designs with the LV2205RLRA Varactor Diode from Onsemi. With a minimum quality factor of 400 and a nominal diode capacitance of 15 pF, this single configuration diode offers superior performance and reliability. Perfect for applications requiring variable capacitance, this diode is designed to excel even in high-temperature environments up to 150 °C. Trust in Onsemi's expertise and craftsmanship to deliver a product that exceeds expectations. Upgrade your projects today with the LV2205RLRA and experience the difference in quality and precision.

Feature Benefit Bullets

Minimum Quality Factor: 400

The high quality factor ensures efficient performance and signal processing capabilities.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection for the diode, extending its lifespan.

Config: SINGLE

Single configuration makes it easy to integrate into circuits and reduces complexity.

Package Shape: ROUND

Round shape allows for easier handling and installation in various devices.

No. of Terminals: 2

Having 2 terminals simplifies the connection process.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact design suitable for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good conductivity and solderability.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting.

Maximum Power Dissipation: 0.28 W

With high power dissipation capability, this diode can handle larger loads.

Nominal Diode Capacitance: 15 pF

The nominal capacitance value ensures optimal performance in various applications.

Minimum Breakdown Voltage: 25 V

A high minimum breakdown voltage provides protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers versatility in tuning and adjusting capacitance levels as needed.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for secure and easy installation on PCBs.

Diode Cap Tolerance: 10 %

The tolerance level ensures accuracy and reliability in capacitance values.

Diode Element Material: SILICON

Silicon diode element material provides stability and reliability in performance.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio ensures a wide range of capacitance adjustment for various applications.

Technical Specifications

Varactor Diodes LV2205RLRA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2205RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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