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LV2209RL1

Onsemi

LV2209RL1 by Onsemi

LV2209RL1 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and a max operating temperature of 150 °C. Ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 922 parts In-Stock

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Vyrian

USA . 172 parts In-Stock

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Problanco Electronics

Mexico . 7,815 parts In-Stock

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TANS Electronics

Latvia . 5,825 parts In-Stock

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SupplyDigital Components

Austria . 3,667 parts In-Stock

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Corphita

USA . 2,062 parts In-Stock

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Kulean Microsystems

USA . 1,690 parts In-Stock

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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Corohmni

South Africa . 200 parts In-Stock

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Overview

Enhance your electronic designs with the LV2209RL1 Varactor Diode by Onsemi. With a minimum quality factor of 200 and a nominal diode capacitance of 33pF, this product offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, you can trust in the quality and expertise that comes with this product. Whether you're working on RF tuning circuits, frequency modulators, or voltage controlled oscillators, the LV2209RL1 provides the value, benefits, and advantages that you need to take your projects to the next level. Upgrade your designs today with the LV2209RL1 from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor ensures optimal performance and efficiency of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the diode lightweight and cost-effective.

Configuration: SINGLE

A single configuration simplifies the setup and installation process.

Package Shape: ROUND

The round package shape allows for easy integration in various electronic applications.

Number of Terminals: 2

Having 2 terminals simplifies the connection and use of the diode.

Package Style (Meter): CYLINDRICAL

The cylindrical package style makes it compatible with standard meter designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range provides reliability in various environmental conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good conductivity and solderability.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy mounting and connection.

Maximum Power Dissipation: 0.28 W

The maximum power dissipation level allows for handling of moderate power levels.

Nominal Diode Capacitance: 33 pF

The nominal diode capacitance value indicates the ability of the diode to store charge.

Minimum Breakdown Voltage: 25 V

The high minimum breakdown voltage ensures protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for tuning of capacitance as per application requirements.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables secure and stable connections on PCBs.

Diode Capacitance Tolerance: 10 %

The diode capacitance tolerance ensures consistency in performance across different units.

Diode Element Material: SILICON

The use of silicon as the diode element material provides stability and reliability in operation.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio indicates the range of capacitance variation available for different applications.

Technical Specifications

Varactor Diodes LV2209RL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2209RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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