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1N5468

Onsemi

1N5468 by Onsemi

1N5468 by Onsemi is a varactor diode with 22pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 500 and low reverse current of 0.00000002uA.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,413 parts In-Stock

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Vyrian

USA . 2,335 parts In-Stock

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Native Components

USA . 736 parts In-Stock

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$0.357

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$0.342

736

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$0.342

Northwest PG Solutions

USA . 1,732 parts In-Stock

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$0.392

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$0.346

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$0.392

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$0.346

TANS Electronics

Latvia . 2,600 parts In-Stock

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2,600

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Kulean Microsystems

USA . 1,936 parts In-Stock

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Corphita

USA . 1,399 parts In-Stock

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UHIMA Technologies

Türkiye . 980 parts In-Stock

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SupplyDigital Components

Austria . 884 parts In-Stock

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Problanco Electronics

Mexico . 457 parts In-Stock

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Corohmni

South Africa . 167 parts In-Stock

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Overview

Unlock the power of precision with the 1N5468 by Onsemi, a top-quality varactor diode designed to meet your exacting standards. Manufactured by industry leader Onsemi, this diode offers unparalleled performance and reliability for a wide range of applications. From RF tuning to voltage-controlled oscillators, this diode delivers exceptional value and benefits to customers seeking superior quality and consistency. Experience the difference with the 1N5468 and take your projects to the next level.

Feature Benefit Bullets

Minimum Quality Factor 500

High quality factor ensures efficient performance and low loss in signal processing applications.

Package Body Material GLASS

Glass package provides excellent protection and durability for the varactor diode, making it suitable for long-term use.

Config SINGLE

Single configuration simplifies installation and integration into various circuit designs.

Variable Capacitance Diode Classification ABRUPT

Abrupt classification ensures precise and fast changes in capacitance, ideal for frequency modulation applications.

Maximum Reverse Current 0.00000002 uA

Low reverse current minimizes power loss and improves overall efficiency of the varactor diode.

Package Shape ROUND

Round shape allows for easy mounting and alignment in circuit boards or systems.

Reverse Test Voltage 25 V

With a high reverse test voltage, the varactor diode can handle excessive reverse voltage without damage, ensuring reliable operation.

No. of Terminals 2

Having two terminals simplifies the connection process and reduces complexity in circuit design.

Package Style (Meter) LONG FORM

Long-form package style provides additional protection and space for the varactor diode, enhancing its durability and longevity.

Maximum Operating Temperature 175 °C

High maximum operating temperature allows the varactor diode to withstand harsh environmental conditions and extended use.

Minimum Operating Temperature -65 °C

Low minimum operating temperature ensures reliable performance even in cold environments.

Terminal Finish TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, facilitating easy installation and maintenance.

Terminal Position AXIAL

Axial terminal position simplifies the connection process and ensures proper alignment in circuit applications.

Case Connection ISOLATED

Isolated case connection prevents interference and enhances the reliability of the varactor diode in sensitive circuit applications.

Maximum Power Dissipation 0.4 W

High maximum power dissipation allows the varactor diode to handle heavy loads and peak power demands without overheating.

Nominal Diode Capacitance 22 pF

Nominal capacitance value of 22 pF ensures precise control and modulation of capacitance levels in the varactor diode.

Minimum Breakdown Voltage 30 V

High minimum breakdown voltage protects the varactor diode from voltage spikes and ensures long-term reliability in circuit applications.

Diode Type VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for dynamic adjustment of capacitance levels, making it versatile and suitable for various applications.

Terminal Form WIRE

Wire terminal form provides flexibility and ease of connection in circuit designs, enhancing the overall usability of the varactor diode.

Maximum Repetitive Peak Reverse Voltage 30 V

High maximum repetitive peak reverse voltage ensures reliable operation and protection against reverse voltage spikes in the varactor diode.

Diode Cap Tolerance 20 %

Capacitance tolerance of 20% provides a good margin of error in capacitance levels, allowing for flexibility and precision in circuit designs.

Diode Element Material SILICON

Silicon diode element material offers good performance and reliability in various temperature and voltage conditions.

Minimum Diode Capacitance Ratio 2.9

Minimum capacitance ratio of 2.9 ensures stable and accurate capacitance changes, making the varactor diode suitable for frequency tuning and modulation applications.

Technical Specifications

Varactor Diodes 1N5468 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

500

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5468 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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