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BBY40,235

NXP Semiconductors

BBY40,235 by NXP Semiconductors

The NXP Semiconductors BBY40,235 is a varactor diode with a max operating temperature of 125°C and min of -55°C. It has a nominal capacitance of 29 pF, breakdown voltage of 30V, and operates in the very high frequency band. This single-config diode is ideal for applications requiring variable capacitance in small outline packages.

Median Price

$0.440

Lifecycle Status

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12

In-Stock Inventory

1k+

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DigiKey

USA . 10,229 parts In-Stock

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$0.440

100+ parts

$0.284

1k+ parts

$0.173

10k+ parts

$0.135

10,229

$0.440

$0.284

$0.173

$0.135

Mouser Electronics

USA . 9,058 parts In-Stock

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$0.440

100+ parts

$0.263

1k+ parts

$0.165

10k+ parts

$0.134

9,058

$0.440

$0.263

$0.165

$0.134

Flip Electronics (Authorized)

USA . 40,000 parts In-Stock

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Chip1Stop

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$0.230

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$0.134

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$0.114

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$0.230

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$0.114

Verical

USA . 10,000 parts In-Stock

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$0.453

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$0.168

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$0.142

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Rochester

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$0.170

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$0.141

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$0.126

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$0.170

$0.141

$0.126

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Digiode

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Vyrian

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Flip Electronics

USA . 40,000 parts In-Stock

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VNN

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South Africa . 125 parts In-Stock

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Ampacity Inc.

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Corphita

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$0.200

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Argo Parts USA

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Aranea Global

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Perfect Parts

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Overview

Unlock the potential of your high-frequency applications with the BBY40,235 Varactor Diode by NXP Semiconductors. This diode offers precise capacitance control and excellent performance in a small outline package, making it ideal for a wide range of electronic devices. Experience the quality and reliability that NXP Semiconductors is known for, while enjoying the benefits of improved signal tuning and frequency modulation. Upgrade your designs with the BBY40,235 and unleash the full potential of your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and resistance to external elements, making the varactor diode suitable for a variety of environments.

Frequency Band: VERY HIGH FREQUENCY

Being designed for very high frequency applications, this varactor diode is ideal for use in high-speed communication systems and RF circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this varactor diode can withstand demanding thermal conditions, ensuring reliable performance.

Nominal Diode Capacitance: 29 pF

The specific capacitance value of 29 pF makes this varactor diode suitable for applications requiring precise control over capacitance changes.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures the varactor diode can handle high voltages without experiencing breakdown, enhancing its reliability.

Technical Specifications

Varactor Diodes BBY40,235 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

BBY40,235 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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