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BBY42TRL13

NXP Semiconductors

BBY42TRL13 by NXP Semiconductors

BBY42TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and voltage-controlled oscillators, it offers reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,433 parts In-Stock

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Vyrian

USA . 643 parts In-Stock

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Anansix

USA . 568 parts In-Stock

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Native Components

USA . 507 parts In-Stock

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$0.113

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$0.109

507

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$0.109

Northwest PG Solutions

USA . 2,329 parts In-Stock

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$0.125

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One Stop Electronics

USA . 1,136 parts In-Stock

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$2.010

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UNI Independent Distributors

Spain . 6,208 parts In-Stock

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Corphita

USA . 2,641 parts In-Stock

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Overview

Unlock a new realm of innovation with the BBY42TRL13 Varactor Diode from NXP Semiconductors. Known for their unparalleled quality and reliability, NXP empowers your designs in areas like RF tuning and frequency modulation. This compact, surface-mount solution offers exceptional performance with a high capacitance ratio, enhancing circuit efficiency while saving space. Elevate your projects with a trusted component designed for excellence and versatility!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making the diode suitable for various applications.

Config: SINGLE

A single configuration simplifies circuit design and integration into various systems, enhancing reliability.

Frequency Band: VERY HIGH FREQUENCY

Operating in the very high frequency range allows this diode to be effective in advanced communication systems and high-speed applications.

Surface Mount: YES

Surface mount compatibility enables easy integration into compact PCB designs, reducing assembly costs and space.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB and facilitates efficient layout in diverse applications.

No. of Terminals: 3

Three terminals provide flexible connection options, improving circuit design versatility and reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables high-density mounting of components, ideal for modern compact electronic devices.

Terminal Position: DUAL

Dual terminal positioning allows easier routing and layout on PCBs, enhancing overall design efficiency.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is particularly useful in tuning applications like RF circuits, providing precise control of capacitance.

Terminal Form: GULL WING

Gull wing terminals facilitate automatic assembly processes, improving production speed and reducing labor costs.

Diode Element Material: SILICON

Silicon material offers excellent electrical characteristics and stability, ensuring reliable performance over time.

Minimum Diode Capacitance Ratio: 12

A minimum capacitance ratio of 12 provides a wide tuning range, making this diode suitable for various RF applications and circuits.

Technical Specifications

Varactor Diodes BBY42TRL13 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BBY42TRL13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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