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BBY40TA

Diodes Incorporated

BBY40TA by Diodes Incorporated

BBY40TA by Diodes Inc. is a hyperabrupt varactor diode with 3 terminals, max power dissipation of 0.33W, and min breakdown voltage of 28V. Ideal for applications requiring variable capacitance diodes in small outline packages for surface mount technology.

Median Price

$0.221

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 18,000 parts In-Stock

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$0.221

18,000

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$0.221

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Prism Electronics

USA . 1,230 parts In-Stock

1+ parts

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100+ parts

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1,230

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,947 parts In-Stock

1+ parts

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1,947

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Perfect Parts

USA . 1,378 parts In-Stock

1+ parts

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1,378

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Native Components

USA . 149 parts In-Stock

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149

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Overview

Unlock endless possibilities with the BBY40TA Varactor Diode by Diodes Incorporated. Designed with precision and quality in mind, this hyperabrupt diode offers unparalleled performance in a compact, surface-mount package. Whether used in frequency tuning, phase-locked loops, or voltage-controlled oscillators, this diode provides unmatched capacitance ratio and breakdown voltage for optimal efficiency. Experience the value and benefits of Diodes Incorporated technology with the BBY40TA - where innovation meets reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good resistance to heat and chemicals, ensuring durability and reliability in various environments.

Config: SINGLE

Simplifies installation and makes it easy to integrate into existing circuits.

Variable Capacitance Diode Classification: HYPERABRUPT

Offers precise control over capacitance, allowing for more accurate tuning and adjustments in electronic circuits.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards, reducing production time and costs.

Package Shape: RECTANGULAR

Facilitates compact and space-saving designs in electronic devices.

No. of Terminals: 3

Provides flexibility in circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

Allows for high component density on circuit boards, optimizing use of space.

Terminal Position: DUAL

Facilitates easier connection to external circuitry.

Maximum Power Dissipation: 0.33 W

Can handle moderate power levels in electronic circuits without overheating.

Minimum Breakdown Voltage: 28 V

Provides a safety margin for voltage spikes and surges, protecting the diode and other components.

Diode Type: VARIABLE CAPACITANCE DIODE

Allows for adjustable capacitance values, making it versatile for various applications.

Terminal Form: GULL WING

Facilitates easy soldering and secure connection to circuit boards.

Diode Cap Tolerance: 10.34 %

Ensures consistency and accuracy in capacitance values, improving overall circuit performance.

Diode Element Material: SILICON

Provides reliable performance and stability over a wide temperature range.

Minimum Diode Capacitance Ratio: 5

Offers a wide range of capacitance adjustment, allowing for precise tuning in electronic circuits.

Technical Specifications

Varactor Diodes BBY40TA attributes and parameters. Explore more Varactor Diodes devices from Diodes Incorporated

Specs

Additional Features:

LOW NOISE

Minimum Breakdown Voltage:

28 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.33 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

BBY40TA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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