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MMVL409T1G

Onsemi

MMVL409T1G by Onsemi

MMVL409T1G by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and a breakdown voltage of 20 V, making it ideal for small outline packages in RF circuits. With gull wing terminals and tin finish, this diode offers precise variable capacitance control.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,750 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

10,750

-

$0.132

$0.110

$0.098

DigiKey

USA . 10,750 parts In-Stock

1+ parts

-

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$0.170

10,750

-

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$0.170

Verical

USA . 10,750 parts In-Stock

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$0.122

10,750

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$0.122

Distributors (In-Stock)

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Vyrian

USA . 339 parts In-Stock

1+ parts

$0.096

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339

$0.096

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Digiode

USA . 2,078 parts In-Stock

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$0.103

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2,078

$0.103

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DigiKey Marketplace

USA . 10,750 parts In-Stock

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10,750

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Distributors (Availability)

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Corohmni

South Africa . 455 parts In-Stock

1+ parts

$0.096

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455

$0.096

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Corphita

USA . 218 parts In-Stock

1+ parts

$0.097

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218

$0.097

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,417 parts In-Stock

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Continental Prestige Electronics

USA . 10,750 parts In-Stock

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$0.096

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10,750

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$0.096

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Perfect Parts

USA . 9,520 parts In-Stock

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TANS Electronics

Latvia . 8,356 parts In-Stock

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Kulean Microsystems

USA . 7,897 parts In-Stock

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Problanco Electronics

Mexico . 7,416 parts In-Stock

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SupplyDigital Components

Austria . 6,272 parts In-Stock

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UHIMA Technologies

Türkiye . 52 parts In-Stock

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Overview

Unlock a world of endless possibilities with the MMVL409T1G by Onsemi. As a leader in the industry, Onsemi delivers top-quality varactor diodes that are perfect for very high frequency applications. With a minimum quality factor of 200 and a small outline package style, this diode offers unparalleled performance and reliability. Whether you're designing communication systems, radar detectors, or RF tuning circuits, the MMVL409T1G provides the precision and efficiency you need to bring your projects to life. Elevate your designs with Onsemi's superior diode technology and experience the difference for yourself.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency in tuning applications.

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the varactor diode.

Config: SINGLE

Single configuration simplifies the circuit design and reduces potential points of failure.

Frequency Band: VERY HIGH FREQUENCY

Suitable for applications requiring very high frequency operations.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying assembly process.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards.

No. of Terminals: 2

Simple circuit connection with only 2 terminals.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Terminal Finish: TIN

Tin finish provides good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections.

Maximum Power Dissipation: 0.2 W

Able to handle higher power dissipation for robust performance.

Nominal Diode Capacitance: 29 pF

Suitable capacitance value for frequency tuning applications.

Minimum Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V ensures reliability in high voltage applications.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a duration of up to 30 seconds.

Peak Reflow Temperature °C: 260

Capable of withstanding high peak reflow temperatures for assembly processes.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diode with variable capacitance for frequency tuning applications.

Terminal Form: GULL WING

Gull wing terminal form for easy soldering and reliable connection.

Maximum Repetitive Peak Reverse Voltage: 20 V

Capable of withstanding repetitive peak reverse voltages of up to 20 V.

Diode Cap Tolerance: 10.34 %

Capacitance tolerance of 10.34% ensures consistent performance.

Diode Element Material: SILICON

Silicon material for diode element provides good performance and reliability.

Minimum Diode Capacitance Ratio: 1.5

A minimum capacitance ratio of 1.5 enables frequency tuning over a wide range.

Technical Specifications

Varactor Diodes MMVL409T1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

1.5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL409T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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