Loading...

MMVL2105T1

Onsemi

MMVL2105T1 by Onsemi

MMVL2105T1 by Onsemi is a varactor diode with 15pF nominal capacitance, 30V breakdown voltage, and 0.2W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

R&J Components

USA . 2,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,790

-

-

-

-

Digiode

USA . 2,052 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,052

-

-

-

-

Vyrian

USA . 615 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

615

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 7,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,800

-

-

-

-

Problanco Electronics

Mexico . 6,627 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,627

-

-

-

-

Kulean Microsystems

USA . 2,486 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,486

-

-

-

-

Corphita

USA . 970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

970

-

-

-

-

SupplyDigital Components

Austria . 454 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

454

-

-

-

-

UHIMA Technologies

Türkiye . 256 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

256

-

-

-

-

Corohmni

South Africa . 106 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

106

-

-

-

-

Overview

Unlock a world of possibilities with the MMVL2105T1 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by industry professionals worldwide. The MMVL2105T1 is ideal for applications requiring variable capacitance diodes, offering precise control and flexibility in circuit design. Its small outline package and dual-terminal configuration make it easy to integrate into any project. Experience the value and benefits of Onsemi's cutting-edge technology with the MMVL2105T1 Varactor Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the varactor diode.

Surface Mount: YES

Offers easy and convenient installation on PCBs, saving time and effort during the assembly process.

No. of Terminals: 2

Simplifies the connection of the varactor diode in a circuit, making it user-friendly for engineers and technicians.

Maximum Power Dissipation: 0.2 W

Ability to handle up to 0.2 watts of power ensures stable performance under various operating conditions.

Nominal Diode Capacitance: 15 pF

Provides precise and reliable capacitance for tuning applications, contributing to the accuracy of the overall system.

Minimum Breakdown Voltage: 30 V

Offers a high breakdown voltage threshold, enhancing the varactor diode's reliability and robustness in demanding environments.

Diode Type: VARIABLE CAPACITANCE DIODE

Enables adjustable capacitance for frequency-tuning applications, making it a versatile choice for RF and microwave circuits.

Technical Specifications

Varactor Diodes MMVL2105T1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMVL2105T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20