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MMVL109T1G

Onsemi

MMVL109T1G by Onsemi

MMVL109T1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is designed for very high frequency applications in small outline packages, suitable for surface mount assembly.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 6,428 parts In-Stock

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Semi Source

USA . 2,012 parts In-Stock

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Digiode

USA . 836 parts In-Stock

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AZTECH Wire

Italy . 270 parts In-Stock

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$18.010

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Kepictronics

USA . 33,000 parts In-Stock

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SupplyDigital Components

Austria . 6,509 parts In-Stock

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Problanco Electronics

Mexico . 4,325 parts In-Stock

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Kulean Microsystems

USA . 2,508 parts In-Stock

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Corphita

USA . 1,309 parts In-Stock

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TANS Electronics

Latvia . 926 parts In-Stock

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UHIMA Technologies

Türkiye . 374 parts In-Stock

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Corohmni

South Africa . 147 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the MMVL109T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality varactor diodes that are perfect for very high frequency applications. With a minimum quality factor of 200, these diodes offer exceptional performance and reliability. Whether you're working on radio frequency circuits or voltage-controlled oscillators, the MMVL109T1G provides the value, benefits, and advantages you need to take your projects to the next level. Choose Onsemi for cutting-edge technology and unmatched quality in every component.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency in tuning circuits, making this varactor diode a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the diode, making it suitable for a variety of environments.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode can handle high-frequency signals with minimal loss, making it ideal for advanced electronics.

Surface Mount: YES

Being surface-mountable simplifies the assembly process and allows for compact designs, making it convenient for modern electronic devices.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, this varactor diode can handle higher power levels without overheating, ensuring reliability in operation.

Nominal Diode Capacitance: 29 pF

The nominal capacitance value of 29 pF offers precise tuning capabilities, making this varactor diode suitable for frequency modulation and voltage-controlled oscillators.

Technical Specifications

Varactor Diodes MMVL109T1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL109T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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