Loading...

1N5698

Onsemi

1N5698 by Onsemi

1N5698 by Onsemi is a Varactor Diode with 10pF nominal capacitance, 65V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,883 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,883

-

-

-

-

Digiode

USA . 1,183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,183

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 555 parts In-Stock

1+ parts

$5.655

100+ parts

-

1k+ parts

-

10k+ parts

-

555

$5.655

-

-

-

SupplyDigital Components

Austria . 8,087 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,087

-

-

-

-

Problanco Electronics

Mexico . 5,611 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,611

-

-

-

-

Kulean Microsystems

USA . 4,071 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,071

-

-

-

-

TANS Electronics

Latvia . 2,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,729

-

-

-

-

Northwest PG Solutions

USA . 1,314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.542

10k+ parts

-

1,314

-

-

$5.542

-

UHIMA Technologies

Türkiye . 699 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

699

-

-

-

-

Corphita

USA . 426 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

426

-

-

-

-

Corohmni

South Africa . 201 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

201

-

-

-

-

Overview

Unleash the power of innovation with the 1N5698 Varactor Diode by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi delivers top-of-the-line components designed to revolutionize the electronics industry. The 1N5698 is perfect for applications requiring precise variable capacitance control, making it ideal for oscillators, filters, and frequency multipliers. Experience unmatched performance and reliability with Onsemi's Varactor Diodes, where value meets excellence. Elevate your projects with the 1N5698 today!

Feature Benefit Bullets

Minimum Quality Factor: 400

A high quality factor ensures better performance and stability of the varactor diode.

Package Body Material: GLASS

Glass package body material provides durability and protection for the diode.

Max Reverse Current: 0.00000002 uA

Low reverse current ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows for versatility and reliability in various applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity.

Nominal Diode Capacitance: 10 pF

A fixed capacitance value of 10 pF provides consistent performance and predictable behavior.

Diode Element Material: SILICON

Silicon diode element material is known for its reliability and stable characteristics.

Minimum Diode Capacitance Ratio: 2.8

A high minimum capacitance ratio allows for wide tuning range and flexibility in applications.

Technical Specifications

Varactor Diodes 1N5698 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.8

Nominal Diode Capacitance:

10 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5698 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20