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1N5685

Onsemi

1N5685 by Onsemi

1N5685 by Onsemi is a varactor diode with 15pF nominal capacitance, abrupt variable capacitance classification, and 550 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.00000002uA and high breakdown voltage of 45V.

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Vyrian

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Digiode

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TANS Electronics

Latvia . 6,005 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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Corphita

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 454 parts In-Stock

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Overview

Unlock the potential of your electronic systems with the 1N5685 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi delivers top-notch components like the 1N5685 that offer exceptional performance in a wide range of applications. Whether you're working on RF tuning, frequency modulation, or voltage-controlled oscillator circuits, this varactor diode with its high-quality factor and low reverse current is the perfect choice. Trust Onsemi to provide the value and benefits your projects deserve.

Feature Benefit Bullets

Minimum Quality Factor: 550

High quality factor ensures good performance and stability in tuning applications.

Package Body Material: GLASS

Glass package provides better mechanical protection and improved reliability for the diode.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diode allows for precise and fast tuning capabilities.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures efficient and low power operation of the diode.

Package Shape: ROUND

Round package shape facilitates easier mounting and handling of the diode.

Reverse Test Voltage: 40 V

High reverse test voltage capability provides extra protection and reliability in reverse bias conditions.

No. of Terminals: 2

Two terminals allow for simple connection and integration into circuits.

Package Style (Meter): LONG FORM

Long form package style provides space efficiency and ease of use in meter applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable operation in a wide range of environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures performance in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and connection reliability.

Terminal Position: AXIAL

Axial terminal position simplifies PCB layout and mounting of the diode.

Case Connection: ISOLATED

Isolated case connection enhances circuit protection and isolation.

Maximum Power Dissipation: 0.4 W

High power dissipation capability ensures stable operation under high power conditions.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value allows for precise tuning and frequency control in circuits.

Minimum Breakdown Voltage: 45 V

High minimum breakdown voltage ensures protection against voltage spikes and surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for dynamic tuning and frequency control in circuits.

Terminal Form: WIRE

Wire terminal form enables easy soldering and connection in circuits.

Maximum Repetitive Peak Reverse Voltage: 40 V

High repetitive peak reverse voltage capability ensures protection in repeated reverse bias conditions.

Diode Cap Tolerance: 20 %

Tight capacitance tolerance ensures consistency in performance and tuning accuracy.

Diode Element Material: SILICON

Silicon diode element material provides good performance and reliability in variable capacitance applications.

Minimum Diode Capacitance Ratio: 3.2

High minimum capacitance ratio allows for wide tuning range and flexibility in circuit design.

Technical Specifications

Varactor Diodes 1N5685 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

550

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5685 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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