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1N5709

Onsemi

1N5709 by Onsemi

1N5709 by Onsemi is a varactor diode with 82pF nominal capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

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Digiode

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Northwest PG Solutions

USA . 2,008 parts In-Stock

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Kulean Microsystems

USA . 7,879 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

Latvia . 4,709 parts In-Stock

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Overview

Unlock the power of precision with the Onsemi 1N5709 Varactor Diode. Manufactured by industry leader Onsemi, this diode offers superior quality and reliability for a wide range of applications. Whether you're working on RF tuning or frequency modulation, the 1N5709 provides unmatched performance with its high-quality factor and variable capacitance design. Trust in Onsemi's reputation for excellence and choose the 1N5709 for your next project.

Feature Benefit Bullets

Minimum Quality Factor: 150

A high minimum quality factor indicates better performance and efficiency of the varactor diode.

Package Body Material: GLASS

Glass material provides durability and reliability to the diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration process.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures fast and precise changes in capacitance for varying voltage levels.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improves overall efficiency.

Package Shape: ROUND

Round package shape allows for easy mounting and integration in various applications.

Reverse Test Voltage: 60 V

A high reverse test voltage rating ensures reliable operation under reverse bias conditions.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces complexity in circuit design.

Package Style (Meter): LONG FORM

Long form package style provides ample space for the diode components and ensures proper heat dissipation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in demanding environments with minimal risk of overheating.

Minimum Operating Temperature: -65 °C

Wide operating temperature range enables the diode to function effectively in extreme temperature conditions.

Terminal Finish: TIN LEAD

Tin lead finish offers good solderability and ensures reliable electrical connections.

Terminal Position: AXIAL

Axial terminal position simplifies the installation and connection process in various applications.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures stable performance of the diode.

Maximum Power Dissipation: 0.4 W

High power dissipation rating allows the diode to handle higher power levels without overheating.

Nominal Diode Capacitance: 82 pF

Optimal capacitance value ensures effective tuning and modulation of the circuit.

Minimum Breakdown Voltage: 65 V

High minimum breakdown voltage ensures protection against voltage surges and spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for precise control and adjustment of capacitance for different applications.

Terminal Form: WIRE

Wire terminal form enables easy and secure connection in various circuit setups.

Maximum Repetitive Peak Reverse Voltage: 60 V

High peak reverse voltage rating ensures reliable operation under reverse bias conditions for extended periods.

Diode Cap Tolerance: 20 %

Tight capacitance tolerance ensures consistent and predictable performance in different circuit scenarios.

Diode Element Material: SILICON

Silicon material provides good electrical properties and ensures stable performance of the diode.

Minimum Diode Capacitance Ratio: 3.2

Having a minimum capacitance ratio of 3.2 allows for efficient tuning and modulation in various RF applications.

Technical Specifications

Varactor Diodes 1N5709 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

82 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

150

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5709 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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