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1N5474

Onsemi

1N5474 by Onsemi

1N5474 by Onsemi is a varactor diode with 68pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

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Digiode

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USA . 1,651 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Overview

Experience superior quality and performance with the 1N5474 Varactor Diode by Onsemi. Known for its reliable manufacturing standards and innovative technology, Onsemi delivers products that exceed expectations. Ideal for various applications, this diode offers customers exceptional value, benefits, and advantages. With a minimum Quality Factor of 250 and a maximum Reverse Current of 0.00000002 uA, this diode ensures optimal functionality and efficiency. Trust Onsemi's 1N5474 to provide the quality and performance you need for your next project.

Feature Benefit Bullets

Minimum Quality Factor: 250

Higher quality factor indicates better performance and efficiency of the diode, making it a reliable choice for various applications.

Package Body Material: GLASS

Glass material provides good thermal and electrical insulation, ensuring durability and stable performance of the diode.

Config: SINGLE

Single configuration allows for easy integration into circuits and simplifies overall circuit design.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures precise and rapid changes in capacitance, making the diode suitable for frequency tuning and modulation applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Package Shape: ROUND

Round package shape provides compact and space-saving design options for the diode's installation.

Reverse Test Voltage: 25 V

High reverse test voltage ensures the diode can withstand reverse bias conditions effectively, enhancing its reliability.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit connection process and reduces the chances of errors during installation.

Package Style (Meter): LONG FORM

Long form package style offers flexibility in mounting options and enhances the diode's versatility in different applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows the diode to withstand extreme environmental conditions without compromising its performance.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode remains operational even in cold environments, expanding its usability range.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and electrical conductivity, ensuring secure connections in the circuit.

Terminal Position: AXIAL

Axial terminal position simplifies the installation process and allows for efficient circuit integration.

Case Connection: ISOLATED

Isolated case connection improves the diode's stability by preventing interference from external factors.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows the diode to handle large power inputs without overheating or damage.

Nominal Diode Capacitance: 68 pF

Nominal capacitance value indicates the diode's ability to store charge, making it suitable for filtering and tuning applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage ensures the diode can withstand high voltage conditions safely, enhancing its reliability and longevity.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for adjustable capacitance levels, making the diode versatile in frequency control and tuning applications.

Terminal Form: WIRE

Wire terminal form offers easy connectivity options and flexible installation in various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage rating ensures the diode can handle reverse bias conditions effectively, enhancing its durability.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for slight variations in capacitance values, ensuring stable performance in different operating conditions.

Diode Element Material: SILICON

Silicon element material offers good thermal stability and high conductivity, improving the diode's overall performance and reliability.

Minimum Diode Capacitance Ratio: 2.9

Minimum capacitance ratio indicates the diode's ability to change capacitance levels effectively, making it suitable for frequency modulation and tuning applications.

Technical Specifications

Varactor Diodes 1N5474 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

68 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

250

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5474 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-688-6316, 5961006886316, 5961-01-397-7366, 5961013977366

NIIN

006886316, 013977366

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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