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1N5456

Onsemi

1N5456 by Onsemi

1N5456 by Onsemi is a varactor diode with 175 min Q factor, 100 pF nominal capacitance, and -65 to 175 °C operating temp. Ideal for RF tuning circuits due to its abrupt variable capacitance classification. With a max reverse current of 0.00000002 uA, it ensures efficient performance in various applications.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 2,044 parts In-Stock

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Digiode

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Electronic Expediters

USA . 23 parts In-Stock

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Inland Empire Components Inc.

USA . 17 parts In-Stock

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Electronics Depot

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Native Components

USA . 277 parts In-Stock

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Northwest PG Solutions

USA . 46 parts In-Stock

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Kulean Microsystems

USA . 6,920 parts In-Stock

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SupplyDigital Components

Austria . 6,638 parts In-Stock

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TANS Electronics

Latvia . 3,223 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 881 parts In-Stock

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Corohmni

South Africa . 322 parts In-Stock

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UHIMA Technologies

Türkiye . 228 parts In-Stock

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Overview

Enhance your electronic devices with the high-quality 1N5456 Varactor Diode by Onsemi. With a minimum quality factor of 175 and a wide operating temperature range, this diode offers reliable performance in various applications. Its variable capacitance and low reverse current make it ideal for frequency tuning and voltage controlled oscillators. Trust Onsemi's reputation for excellence in semiconductor manufacturing to deliver a product that meets your needs for efficiency and precision. Upgrade your designs with the 1N5456 Varactor Diode and experience the difference in performance and reliability today.

Feature Benefit Bullets

Minimum Quality Factor: 175

Higher quality factor indicates better performance and stability in tuning applications.

Package Body Material: GLASS

Glass packaging provides good protection and reliability for the diode.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diode allows for precise and rapid tuning adjustments.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures low power consumption and improved efficiency.

Package Shape: ROUND

Round shape facilitates easy mounting and handling in circuit layouts.

Reverse Test Voltage: 25 V

Suitable reverse test voltage for various applications.

No. of Terminals: 2

Simplified two-terminal design for ease of connection.

Package Style (Meter): LONG FORM

Long form package style offers versatility in mounting options and space efficiency.

Maximum Operating Temperature: 175 °C

Wide operating temperature range for reliable performance in different environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and connection reliability.

Terminal Position: AXIAL

Axial terminal position for easy insertion and soldering in circuits.

Case Connection: ISOLATED

Isolated case connection for better circuit protection and stability.

Maximum Power Dissipation: 0.4 W

High power dissipation capability for handling heavy loads without overheating.

Nominal Diode Capacitance: 100 pF

Nominal capacitance value suitable for various frequency tuning applications.

Minimum Breakdown Voltage: 30 V

Higher minimum breakdown voltage for improved voltage handling capacity.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode for tuning applications and frequency modulation.

Terminal Form: WIRE

Wire terminal form for easy connection and flexibility in circuit layouts.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable maximum repetitive peak reverse voltage for stable operation.

Diode Cap Tolerance: 20 %

Capacitance tolerance allows for precision tuning and frequency control.

Diode Element Material: SILICON

Silicon diode element material for reliable performance and durability.

Minimum Diode Capacitance Ratio: 2.7

Higher minimum capacitance ratio for better frequency tuning range.

Technical Specifications

Varactor Diodes 1N5456 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.7

Nominal Diode Capacitance:

100 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

175

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5456 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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