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MV2105RL1

Onsemi

MV2105RL1 by Onsemi

MV2105RL1 by Onsemi is a Varactor Diode with 15pF capacitance, 30V breakdown voltage, and 400 min quality factor. It is ideal for RF tuning applications due to its variable capacitance property and can operate at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,446 parts In-Stock

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Vyrian

USA . 2,287 parts In-Stock

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2,287

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Kulean Microsystems

USA . 7,807 parts In-Stock

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SupplyDigital Components

Austria . 6,900 parts In-Stock

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6,900

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TANS Electronics

Latvia . 6,585 parts In-Stock

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Problanco Electronics

Mexico . 4,552 parts In-Stock

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Corphita

USA . 825 parts In-Stock

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Corohmni

South Africa . 445 parts In-Stock

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UHIMA Technologies

Türkiye . 412 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the MV2105RL1 Varactor Diode by Onsemi. Known for their superior quality and precision engineering, Onsemi brings you a product that is guaranteed to exceed your expectations. Ideal for a wide range of applications, this variable capacitance diode offers unparalleled performance and reliability. Unlock limitless possibilities with the MV2105RL1 and experience the true value it brings to your projects. Trust Onsemi to deliver excellence every time.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures efficient performance and signal stability.

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for easy handling and longevity.

Config: SINGLE

Simplified setup with single configuration for ease of use.

Package Shape: ROUND

Compact round shape for efficient space utilization.

No. of Terminals: 2

Simple two-terminal design for straightforward connections.

Package Style (Meter): CYLINDRICAL

Cylindrical package style for easy installation and compatibility.

Maximum Operating Temperature: 150 °C

High operating temperature limit for versatile use in various environments.

Terminal Finish: TIN LEAD

Tin lead finish for corrosion resistance and reliable connections.

Terminal Position: BOTTOM

Bottom terminal position for convenient PCB mounting.

Maximum Power Dissipation: 0.28 W

Efficient power dissipation capability for sustained performance.

Nominal Diode Capacitance: 15 pF

Optimal capacitance rating for effective signal processing.

Minimum Breakdown Voltage: 30 V

High breakdown voltage for protection against electrical surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode for adjustable performance in tuning applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form for secure and stable connections.

Diode Cap Tolerance: 10 %

Tight tolerance for consistent and reliable capacitance values.

Diode Element Material: SILICON

Silicon material for high efficiency and durability in diode construction.

Minimum Diode Capacitance Ratio: 2.5

High capacitance ratio for precise tuning and modulation capabilities.

Technical Specifications

Varactor Diodes MV2105RL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2105RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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