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BB844E6327HTSA1

Infineon Technologies

BB844E6327HTSA1 by Infineon Technologies

Infineon's BB844E6327HTSA1 is a varactor diode with common cathode, 2 elements, and very high frequency band. It has a capacitance of 43.75 pF, breakdown voltage of 18 V, and operates b/w -55 to 150°C. Ideal for applications requiring variable capacitance in small outline packages like RF tuning circuits.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 14,548 parts In-Stock

1+ parts

$0.540

100+ parts

$0.213

1k+ parts

$0.143

10k+ parts

$0.105

14,548

$0.540

$0.213

$0.143

$0.105

Newark

USA . 10,535 parts In-Stock

1+ parts

$0.584

100+ parts

$0.249

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$0.178

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-

10,535

$0.584

$0.249

$0.178

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Verical

USA . 15,000 parts In-Stock

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Chip1Stop

Japan . 15,000 parts In-Stock

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$0.212

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$0.212

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RS (Exports)

UK . 15,000 parts In-Stock

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$0.099

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$0.099

Element14

Singapore . 9,885 parts In-Stock

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$0.201

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$0.105

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$0.100

9,885

-

$0.201

$0.105

$0.100

Farnell

UK . 9,550 parts In-Stock

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-

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$0.176

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$0.117

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$0.083

9,550

-

$0.176

$0.117

$0.083

Rochester

USA . 3,303 parts In-Stock

1+ parts

-

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$0.116

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$0.096

10k+ parts

$0.086

3,303

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$0.116

$0.096

$0.086

Arrow

USA . 3,000 parts In-Stock

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$0.105

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$0.105

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 696 parts In-Stock

1+ parts

$0.053

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696

$0.053

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Nova Conductors

Japan . 650 parts In-Stock

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$0.143

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650

$0.143

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Vyrian

USA . 21,635 parts In-Stock

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21,635

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TME

Poland . 6,000 parts In-Stock

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$0.098

6,000

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$0.098

VNN

France . 618 parts In-Stock

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618

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 168 parts In-Stock

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$0.021

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168

$0.021

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Semicontronic

India . 21,642 parts In-Stock

1+ parts

$0.048

100+ parts

$0.047

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$0.047

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21,642

$0.048

$0.047

$0.047

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Ampacity Inc.

Singapore . 21,477 parts In-Stock

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$0.048

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21,477

$0.048

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Corphita

USA . 703 parts In-Stock

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$0.050

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703

$0.050

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Component Stockers USA

USA . 58,212 parts In-Stock

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$0.100

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$0.090

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$0.080

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$0.080

58,212

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$0.090

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$0.080

Argo Parts USA

USA . 4,292 parts In-Stock

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$0.115

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$0.112

4,292

$0.115

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$0.112

Modulus Dynamics

Lithuania . 993 parts In-Stock

1+ parts

$0.143

100+ parts

$0.137

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$0.132

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993

$0.143

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$0.132

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Corohmni

South Africa . 391 parts In-Stock

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Perfect Parts

USA . 34,916 parts In-Stock

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Continental Prestige Electronics

USA . 15,101 parts In-Stock

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$0.212

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$0.120

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$0.101

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$0.101

GreenTree Electronics

Israel . 3,000 parts In-Stock

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RC Electronics

USA . 2,696 parts In-Stock

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$0.120

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$0.110

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2,696

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$0.110

Infinite Electronics LLP (Excess)

. 1,169 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.140

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$0.136

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$0.133

100

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$0.140

$0.136

$0.133

Overview

Unlock a world of advanced technology with the BB844E6327HTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality varactor diodes that are perfect for very high-frequency applications. With a common cathode configuration and two elements, this diode offers exceptional performance and reliability. Whether you're working on telecommunications, radar systems, or frequency modulation, this diode's small outline package and gull wing terminal form make it easy to integrate into your project. Trust Infineon Technologies to provide you with the cutting-edge technology you need to stay ahead in today's fast-paced world.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable materials ensure longevity and reliability of the diode.

Config: COMMON CATHODE, 2 ELEMENTS

Provides flexibility in circuit design and allows for better performance in applications.

Frequency Band: VERY HIGH FREQUENCY

Ideal for high-frequency applications where precision and stability are crucial.

Surface Mount: YES

Offers easy and efficient installation on circuit boards.

Package Shape: RECTANGULAR

Compact design allows for space-saving and efficient circuit layout.

No. of Terminals: 3

Provides easy connectivity and integration into existing circuits.

Package Style (Meter): SMALL OUTLINE

Perfect for applications where space is limited but performance is key.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of environments.

Minimum Operating Temperature: -55 °C

Operates effectively in cold conditions, ensuring reliability in various climates.

Terminal Finish: TIN

Offers corrosion resistance and ensures good electrical contact for optimal performance.

Terminal Position: DUAL

Provides flexibility in circuit layout and allows for easier connections.

Nominal Diode Capacitance: 43.75 pF

Offers precise capacitance for accurate tuning in RF applications.

Minimum Breakdown Voltage: 18 V

Provides reliable protection against voltage spikes and surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Allows for adjustment of capacitance, making it versatile for various applications.

Terminal Form: GULL WING

Allows for easy and secure mounting on circuit boards.

Diode Cap Tolerance: 2.86 %

Ensures consistent performance and accuracy in capacitance values.

Diode Element Material: SILICON

Provides durability and reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 3.2

Offers a wide range of capacitance values for flexibility in circuit design.

Technical Specifications

Varactor Diodes BB844E6327HTSA1 attributes and parameters. Explore more Varactor Diodes devices from Infineon Technologies

Specs

Additional Features:

CAPACITANCE MATCHED TO 1.5%

Minimum Breakdown Voltage:

18 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

2.86 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

43.75 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BB844E6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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