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1N5472

Onsemi

1N5472 by Onsemi

1N5472 by Onsemi is a varactor diode with 47pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. With a temperature range of -65 to 175 °C, it offers high quality factor and low power dissipation.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,648 parts In-Stock

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Digiode

USA . 108 parts In-Stock

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Native Components

USA . 89 parts In-Stock

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$10.470

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Northwest PG Solutions

USA . 299 parts In-Stock

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$10.365

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TANS Electronics

Latvia . 6,457 parts In-Stock

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Problanco Electronics

Mexico . 3,841 parts In-Stock

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SupplyDigital Components

Austria . 3,692 parts In-Stock

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Kulean Microsystems

USA . 1,877 parts In-Stock

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UHIMA Technologies

Türkiye . 729 parts In-Stock

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Corphita

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Corohmni

South Africa . 115 parts In-Stock

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Overview

Enhance your electronic designs with the 1N5472 Varactor Diode by Onsemi. Known for their top-quality components, Onsemi delivers reliable and efficient solutions for a wide range of applications. The 1N5472 stands out with its high quality factor and precise variable capacitance, offering customers superior performance and value. Whether you're working on RF tuning circuits or frequency modulators, this diode provides the control and stability you need to bring your projects to the next level. Trust Onsemi and the 1N5472 to elevate your designs with unmatched precision and reliability.

Feature Benefit Bullets

Minimum Quality Factor: 400

Having a high minimum quality factor ensures high performance and efficiency of the varactor diode.

Package Body Material: GLASS

Glass is a durable and reliable material, providing good protection for the diode.

Config: SINGLE

Single configuration makes the varactor diode easy to use and integrate into circuits.

Variable Capacitance Diode Classification: ABRUPT

An abrupt variable capacitance diode allows for precise and rapid adjustments in capacitance.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and high efficiency.

Package Shape: ROUND

Round package shape offers easy handling and installation.

Reverse Test Voltage: 25 V

The reverse test voltage of 25V ensures safe operation of the diode.

No. of Terminals: 2

Two terminals provide a simple connection for the diode.

Package Style (Meter): LONG FORM

Long form package style allows for easy identification and compatibility.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures the diode can withstand various environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for use in colder environments without compromising performance.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity.

Terminal Position: AXIAL

Axial terminal position facilitates easy mounting and connection in circuits.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and ensures stable performance.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4W, the diode can handle high power levels efficiently.

Nominal Diode Capacitance: 47 pF

Having a nominal capacitance of 47 pF allows for precise adjustment in capacitance values.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V ensures protection against voltage spikes and surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for adjustable capacitance levels as needed.

Terminal Form: WIRE

Wire terminal form provides easy connection and flexibility in installation.

Maximum Repetitive Peak Reverse Voltage: 30 V

Maximum repetitive peak reverse voltage of 30V ensures safe operation under varying conditions.

Diode Cap Tolerance: 20 %

Having a tolerance of 20% allows for variations in capacitance levels without affecting performance significantly.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and performance.

Minimum Diode Capacitance Ratio: 2.9

A minimum capacitance ratio of 2.9 provides flexibility in adjusting capacitance levels for different applications.

Technical Specifications

Varactor Diodes 1N5472 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5472 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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