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1N5444

Onsemi

1N5444 by Onsemi

The Onsemi 1N5444 Varactor Diode has a Min Quality Factor of 400, Max Reverse Current of 0.02uA, and Nominal Diode Capacitance of 12pF. It is used in RF applications for tuning circuits due to its Variable Capacitance Diode Classification as ABRUPT.

Median Price

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Lifecycle Status

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Vyrian

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LittleDiode

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Kulean Microsystems

USA . 5,177 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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UHIMA Technologies

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Corphita

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Overview

Unleash the power of innovation with the 1N5444 Varactor Diode by Onsemi. Manufactured with top-notch quality and precision, this diode offers a wide range of applications in industries such as telecommunications, radar systems, and aerospace. With a minimum quality factor of 400 and a unique variable capacitance classification, this diode provides unmatched performance and reliability. Experience the benefits of improved signal processing and increased efficiency with the 1N5444, setting a new standard in electronic components. Elevate your projects to the next level with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures better performance and stability in various applications.

Package Body Material: GLASS

Glass material provides durability and protection for the varactor diode, making it suitable for a wide range of environments.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification indicates fast and precise changes in capacitance, allowing for efficient signal tuning.

Maximum Reverse Current: 0.02 uA

Low reverse current minimizes power loss and enhances overall efficiency.

Package Shape: ROUND

Round shape facilitates easy mounting and placement within electronic systems.

Reverse Test Voltage: 25 V

High reverse test voltage rating ensures reliable operation under varying conditions.

No. of Terminals: 2

Two terminals simplify connectivity and installation in circuits.

Package Style (Meter): LONG FORM

Long-form package style provides ample space for components and leads to better heat dissipation.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for versatile usage in different environments.

Minimum Operating Temperature: -65 °C

The ability to operate at low temperatures increases the applicability of the varactor diode in various applications.

Terminal Finish: TIN LEAD

Tin lead finish offers strong solderability and reliable connections.

Terminal Position: AXIAL

Axial terminal position enables easy installation and connection in circuits.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and enhances stability in signal processing.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows for handling of higher power levels without compromising performance.

Nominal Diode Capacitance: 12 pF

Nominal capacitance value ensures accurate tuning and control in electronic circuits.

Minimum Breakdown Voltage: 30 V

High breakdown voltage rating ensures protection against voltage spikes and overloads.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers flexibility in tuning signals and adjusting circuit parameters.

Terminal Form: WIRE

Wire terminal form provides simple and reliable connections in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage rating ensures long-term reliability and stability in operation.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for precise tuning and adjustment in circuit designs.

Diode Element Material: SILICON

Silicon material in the diode element offers high performance, reliability, and durability.

Minimum Diode Capacitance Ratio: 2.6

High minimum capacitance ratio ensures effective signal modulation and control in electronic circuits.

Technical Specifications

Varactor Diodes 1N5444 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

12 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5444 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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