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SVC381-TL-E

Onsemi

SVC381-TL-E by Onsemi

SVC381-TL-E by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and Nominal Capacitance of 427.5 pF. Commonly used in RF applications due to its Variable Capacitance and Breakdown Voltage of 16V, it features a Small Outline package for surface mount assembly at temperatures up to 125 °C.

Median Price

$0.411

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 44,692 parts In-Stock

1+ parts

-

100+ parts

$0.396

1k+ parts

$0.329

10k+ parts

$0.293

44,692

-

$0.396

$0.329

$0.293

DigiKey

USA . 44,692 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.500

10k+ parts

-

44,692

-

-

$0.500

-

Verical

USA . 44,692 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.411

10k+ parts

$0.367

44,692

-

-

$0.411

$0.367

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,143 parts In-Stock

1+ parts

$0.264

100+ parts

-

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-

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2,143

$0.264

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Digiode

USA . 1,340 parts In-Stock

1+ parts

$0.309

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1,340

$0.309

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 494 parts In-Stock

1+ parts

$0.264

100+ parts

-

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494

$0.264

-

-

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Corphita

USA . 1,015 parts In-Stock

1+ parts

$0.292

100+ parts

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1,015

$0.292

-

-

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Continental Prestige Electronics

USA . 45,100 parts In-Stock

1+ parts

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100+ parts

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$0.264

10k+ parts

-

45,100

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$0.264

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SupplyDigital Components

Austria . 5,284 parts In-Stock

1+ parts

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5,284

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TANS Electronics

Latvia . 4,791 parts In-Stock

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4,791

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Kulean Microsystems

USA . 3,687 parts In-Stock

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3,687

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UHIMA Technologies

Türkiye . 600 parts In-Stock

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600

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Kepictronics

USA . 220 parts In-Stock

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Problanco Electronics

Mexico . 70 parts In-Stock

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70

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Overview

Upgrade your electronics with the SVC381-TL-E by Onsemi, a top-of-the-line Varactor Diode that promises exceptional quality and performance. Manufactured by Onsemi, a trusted name in semiconductor technology, this diode features a common cathode configuration with two elements for versatile applications. Whether you're looking to enhance signal processing or improve frequency tuning, this diode delivers precise results. With a minimum quality factor of 200 and a maximum operating temperature of 125 °C, customers can expect reliability and durability. Trust Onsemi's expertise and invest in the SVC381-TL-E for superior electronic solutions.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor indicates good performance and stability of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the diode.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easier integration and circuit design.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification enables precise and controlled capacitance adjustments in the circuit.

Surface Mount: YES

Surface mount capability simplifies installation and promotes space-saving design.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and utilization in various electronic devices.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and ensures proper functionality.

Package Style (Meter): SMALL OUTLINE

Small outline package style enhances portability and facilitates easy integration in compact spaces.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance in challenging environments.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish enhances conductivity and corrosion resistance for long-lasting usage.

Terminal Position: DUAL

Dual terminal position provides stability and facilitates secure connections in the circuit.

Nominal Diode Capacitance: 427.5 pF

The nominal capacitance value indicates the efficiency and effectiveness of the varactor diode.

Minimum Breakdown Voltage: 16 V

Having a minimum breakdown voltage of 16V ensures protection against voltage spikes and surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diode's capability to vary capacitance makes it suitable for frequency tuning and signal modulation applications.

Terminal Form: GULL WING

The gull wing terminal form enables secure soldering and reliable connections in the circuit.

No. of Elements: 2

Having 2 elements allows for more precise and controlled capacitance adjustments in the circuit.

Diode Cap Tolerance: 4.09 %

Low capacitance tolerance ensures accurate and consistent performance of the varactor diode.

Diode Element Material: SILICON

The use of silicon as the diode element material provides stability and durability for prolonged use.

Minimum Diode Capacitance Ratio: 15

The minimum capacitance ratio of 15 indicates the varactor diode's efficiency in capacitance modulation.

Technical Specifications

Varactor Diodes SVC381-TL-E attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

4.09 %

Minimum Diode Capacitance Ratio:

15

Nominal Diode Capacitance:

427.5 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Minimum Quality Factor:

200

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

SVC381-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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