Loading...

MV2109RLRM

Onsemi

MV2109RLRM by Onsemi

MV2109RLRM by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,096 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,096

-

-

-

-

Digiode

USA . 814 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

814

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 6,948 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,948

-

-

-

-

Kulean Microsystems

USA . 2,732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,732

-

-

-

-

Corphita

USA . 1,824 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,824

-

-

-

-

TANS Electronics

Latvia . 1,179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,179

-

-

-

-

UHIMA Technologies

Türkiye . 881 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

881

-

-

-

-

SupplyDigital Components

Austria . 744 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

744

-

-

-

-

Corohmni

South Africa . 128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

128

-

-

-

-

Overview

Enhance your electronic designs with the MV2109RLRM Varactor Diode from Onsemi. With a minimum quality factor of 200 and a nominal capacitance of 33 pF, this diode offers exceptional performance and reliability for applications requiring variable capacitance. The single configuration and cylindrical package make it easy to integrate into your circuits while the high breakdown voltage of 30V ensures durability. Trust in Onsemi's reputation for quality and innovation to bring value to your projects. Upgrade your designs today with the MV2109RLRM Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance in tuning and frequency agility, making this varactor diode suitable for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides good mechanical strength and insulation, making the varactor diode durable and reliable.

Config: SINGLE

Single configuration simplifies circuit design and ensures ease of integration, making this varactor diode convenient for various applications.

Package Shape: ROUND

Round shape helps in efficient mounting and space-saving, making this varactor diode suitable for compact electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies circuit connections, making it easier for users to integrate the varactor diode into their designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand increased heat levels, ensuring reliable performance in demanding conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and corrosion resistance, ensuring secure connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB layout and soldering, enhancing the convenience of using this varactor diode in circuit assembly.

Maximum Power Dissipation: 0.28 W

The high maximum power dissipation rating allows this varactor diode to handle higher power levels without the risk of damage, ensuring long-term reliability.

Nominal Diode Capacitance: 33 pF

The specified nominal capacitance makes this varactor diode suitable for frequency tuning applications where precise capacitance values are required.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V indicates robustness against voltage spikes, enhancing the overall reliability and durability of this varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance, making it ideal for frequency modulators, voltage-controlled oscillators, and other tuning applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows easy and secure mounting on the PCB, ensuring stability and reliability in the circuit.

Diode Cap Tolerance: 10 %

With a 10% capacitance tolerance, this varactor diode provides consistency in performance and helps in achieving accurate tuning and frequency control.

Diode Element Material: SILICON

Silicon diode element material offers good reliability and temperature stability, making this varactor diode suitable for diverse operating conditions.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio of 2.5 indicates a wide tuning range, allowing for versatile frequency control and modulation capabilities in electronic circuits.

Technical Specifications

Varactor Diodes MV2109RLRM attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2109RLRM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20