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MV209ZL1

Onsemi

MV209ZL1 by Onsemi

The Onsemi MV209ZL1 is a Varactor Diode with 29pF capacitance, 30V breakdown voltage, and 200 min quality factor. Ideal for Very High Frequency applications due to its variable capacitance nature and operating temperature up to 125 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,707 parts In-Stock

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Digiode

USA . 568 parts In-Stock

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SupplyDigital Components

Austria . 7,581 parts In-Stock

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Problanco Electronics

Mexico . 3,084 parts In-Stock

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TANS Electronics

Latvia . 2,560 parts In-Stock

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Corphita

USA . 1,314 parts In-Stock

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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Kulean Microsystems

USA . 454 parts In-Stock

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Corohmni

South Africa . 344 parts In-Stock

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Overview

Enhance your electronic designs with the MV209ZL1 by Onsemi, a top-quality varactor diode that offers exceptional performance in very high-frequency applications. Manufactured by Onsemi, this diode boasts a minimum quality factor of 200 and a nominal capacitance of 29 pF, providing precise variable capacitance control. With a maximum power dissipation of 0.2 W and a minimum breakdown voltage of 30 V, this diode ensures reliability and longevity in your circuits. Whether you're working on RF amplifiers, voltage-controlled oscillators, or frequency synthesizers, the MV209ZL1 delivers unparalleled value and benefits to meet your design needs.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor ensures better performance and stability in high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package makes the diode lightweight and durable for various applications.

Frequency Band: VERY HIGH FREQUENCY

Designed specifically for very high frequency applications, ensuring optimal performance in such conditions.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic circuits.

No. of Terminals: 2

Simple two-terminal design makes it easy to integrate into existing circuit designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand demanding operating conditions without failure.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliable connections in circuit boards.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2W, this diode can handle moderate power levels effectively.

Nominal Diode Capacitance: 29 pF

Nominal diode capacitance of 29pF indicates the ability of this diode to store and release charge efficiently.

Minimum Breakdown Voltage: 30 V

Minimum breakdown voltage of 30V ensures protection against voltage surges and overloads.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for tuning and adjustment of capacitance as needed in different circuit configurations.

Diode Element Material: SILICON

Silicon diode element material ensures high performance and reliability in various operating conditions.

Technical Specifications

Varactor Diodes MV209ZL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV209ZL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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