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MV209RLRP

Onsemi

MV209RLRP by Onsemi

The Onsemi MV209RLRP is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this single-configured diode has a max power dissipation of 0.2 W. Its through-hole terminal form and silicon element material make it suitable for various RF tuning circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,724 parts In-Stock

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Vyrian

USA . 1,261 parts In-Stock

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Kulean Microsystems

USA . 4,882 parts In-Stock

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TANS Electronics

Latvia . 4,231 parts In-Stock

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Problanco Electronics

Mexico . 3,280 parts In-Stock

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Corphita

USA . 2,450 parts In-Stock

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SupplyDigital Components

Austria . 1,032 parts In-Stock

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UHIMA Technologies

Türkiye . 857 parts In-Stock

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Corohmni

South Africa . 437 parts In-Stock

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Overview

Unlock a world of possibilities with the MV209RLRP Varactor Diode by Onsemi. Known for their top-notch quality and innovative technology, Onsemi brings you a product that exceeds expectations. Ideal for very high frequency applications, this diode offers a high minimum quality factor of 200, ensuring reliable performance. With a nominal capacitance of 29 pF and a minimum breakdown voltage of 30V, this diode is perfect for various electronic projects. Experience the value and benefits of Onsemi's MV209RLRP Varactor Diode today!

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor ensures efficient performance and signal integrity, making this varactor diode a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the diode, making it suitable for various environments.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is ideal for systems requiring precise tuning and stability.

Package Shape: ROUND

The round package shape offers easy installation and compatibility with standard mounting methods, facilitating integration into different systems.

No. of Terminals: 2

With 2 terminals, this varactor diode is simple to connect and can be easily integrated into circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient heat dissipation, ensuring the diode stays within its operating temperature range for optimal performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good electrical conductivity and solderability, making installation and connections hassle-free.

Terminal Position: BOTTOM

The bottom terminal position enables a secure and stable connection in circuit layouts, preventing accidental disconnection or interference.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, this varactor diode can handle moderate power levels without risk of damage, ensuring long-term reliability.

Nominal Diode Capacitance: 29 pF

The nominal capacitance of 29 pF provides precise tuning capabilities, allowing for accurate adjustment of the diode's capacitance for desired performance.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V ensures protection against voltage spikes or surges, enhancing the diode's durability and longevity.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels, making it versatile for various tuning and frequency control applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the installation process and provides a sturdy connection, ensuring stable performance in different circuit configurations.

Diode Cap Tolerance: 10.34 %

The diode capacitance tolerance of 10.34% ensures consistent performance and accuracy in tuning applications, providing reliable results.

Diode Element Material: SILICON

Constructed with silicon as the diode element material, this product offers high efficiency, low noise, and reliability for demanding applications.

Minimum Diode Capacitance Ratio: 5

The minimum capacitance ratio of 5 allows for significant tuning capabilities and flexibility in adjusting the diode's capacitance, enabling precise control over frequency responses.

Technical Specifications

Varactor Diodes MV209RLRP attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV209RLRP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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