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MV209RL1

Onsemi

MV209RL1 by Onsemi

MV209RL1 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and very high frequency band. It is used in applications requiring variable capacitance diodes for tuning circuits at temperatures up to 125 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,650 parts In-Stock

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Digiode

USA . 1,393 parts In-Stock

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SupplyDigital Components

Austria . 3,362 parts In-Stock

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Kulean Microsystems

USA . 1,839 parts In-Stock

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TANS Electronics

Latvia . 1,596 parts In-Stock

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Corphita

USA . 1,585 parts In-Stock

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UHIMA Technologies

Türkiye . 872 parts In-Stock

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Problanco Electronics

Mexico . 562 parts In-Stock

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Corohmni

South Africa . 162 parts In-Stock

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Overview

Unlock endless possibilities with the MV209RL1 Varactor Diode by Onsemi. With a minimum quality factor of 200 and very high frequency capabilities, this diode is perfect for a wide range of applications. Its plastic/epoxy body material and cylindrical package style ensure durability and reliability. Whether you're in the telecommunications industry or working on radar systems, this diode offers exceptional value and performance. Trust in Onsemi's renowned quality and choose the MV209RL1 for your next project.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor ensures better performance and efficiency in frequency tuning applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and insulation, making the diode suitable for various environmental conditions.

Config: SINGLE

Single configuration simplifies the circuit design and reduces complexity in the overall system.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high-frequency applications, ensuring accurate tuning and performance in advanced communication systems.

Package Shape: ROUND

Round package shape allows for easy installation and handling, making it convenient for assembly.

No. of Terminals: 2

Two terminals simplify the connection and integration of the diode into the circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides compactness and ease of mounting in tight spaces.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the diode can withstand elevated temperatures during operation.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability for reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2W, the diode can handle power efficiently without overheating.

Nominal Diode Capacitance: 29 pF

Nominal diode capacitance of 29pF allows for precise tuning and control of capacitance in RF applications.

Minimum Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, the diode offers protection against voltage spikes and ensures reliable operation.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode provides flexibility in tuning capacitance for frequency modulation and signal processing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables easy installation and secure mounting on PCBs.

Diode Cap Tolerance: 10.34 %

Diode cap tolerance of 10.34% ensures consistent and accurate capacitance values for stable performance.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 5

Minimum diode capacitance ratio of 5 enables significant changes in capacitance for frequency control and modulation.

Technical Specifications

Varactor Diodes MV209RL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV209RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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