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MV209RLRA

Onsemi

MV209RLRA by Onsemi

MV209RLRA by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this cylindrical diode has a max power dissipation of 0.2 W, making it suitable for RF tuning circuits.

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Vyrian

USA . 1,842 parts In-Stock

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Digiode

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QUARKTWIN TECHNOLOGY LTD

USA . 24,500 parts In-Stock

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SupplyDigital Components

Austria . 5,557 parts In-Stock

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Problanco Electronics

Mexico . 4,088 parts In-Stock

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Corphita

USA . 1,608 parts In-Stock

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Kulean Microsystems

USA . 830 parts In-Stock

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TANS Electronics

Latvia . 554 parts In-Stock

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UHIMA Technologies

Türkiye . 528 parts In-Stock

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Corohmni

South Africa . 467 parts In-Stock

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Perfect Parts

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Overview

Unlock the potential of your electronic devices with the MV209RLRA Varactor Diode by Onsemi. With a minimum quality factor of 200 and Hyperabrupt variable capacitance diode classification, this product ensures top-notch performance in very high-frequency applications. Manufactured with precision and expertise, Onsemi guarantees reliability and durability. Perfect for a wide range of applications, this diode offers customers superior value, benefits, and advantages. Elevate your projects with the MV209RLRA and experience unparalleled quality like never before.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor of 200 indicates excellent performance and efficiency in high frequency applications, making this Varactor Diode a top choice for demanding circuits.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making this diode suitable for a wide range of operating conditions.

Config: SINGLE

The single configuration simplifies the design and integration process, making this Varactor Diode easy to use in various circuit setups.

Variable Capacitance Diode Classification: HYPERABRUPT

The hyperabrupt classification indicates fast and precise voltage-controlled capacitance changes, making this diode ideal for applications requiring rapid tuning and frequency agility.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency bands, this Varactor Diode is well-suited for applications that demand robust performance in high-speed communication systems.

Package Shape: ROUND

The round package shape simplifies mounting and installation, enhancing the ease of use and integration of this diode in various circuit layouts.

No. of Terminals: 2

With two terminals, this Varactor Diode offers straightforward connectivity and compatibility with standard circuit board layouts, facilitating easy installation and circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enables efficient heat dissipation and compact design, making this diode suitable for space-constrained applications where thermal management is crucial.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures reliable solderability and long-term connection stability, enhancing the overall performance and durability of this Varactor Diode.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and secure mounting on circuit boards, facilitating smooth integration and ensuring proper contact for efficient signal transmission.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, this Varactor Diode can handle moderate power levels, ensuring reliable operation and longevity even under challenging conditions.

Nominal Diode Capacitance: 29 pF

The 29 pF nominal diode capacitance provides a suitable range for capacitance tuning in various applications, offering flexibility and precision in frequency control.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures the diode's robustness and reliability under high voltage conditions, making it a dependable choice for voltage-sensitive circuits.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this Varactor Diode can withstand high-temperature soldering processes, ensuring secure attachment and reliable performance during assembly.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this component offers precise capacitance control and tuning capabilities, making it ideal for applications requiring frequency modulation and signal processing.

Terminal Form: THROUGH-HOLE

The through-hole terminal form facilitates easy and secure mounting on circuit boards, ensuring stable connections and reliable performance in diverse electronic systems.

Diode Cap Tolerance: 10.34 %

With a diode capacitance tolerance of 10.34%, this Varactor Diode provides consistent and accurate capacitance values, enabling precise frequency tuning and reliable circuit operation.

Diode Element Material: SILICON

Constructed with silicon as the diode element material, this Varactor Diode offers excellent performance characteristics, low noise levels, and high reliability, making it a preferred choice for demanding applications.

Minimum Diode Capacitance Ratio: 5

The minimum diode capacitance ratio of 5 indicates a wide range of capacitance adjustment, allowing for versatile frequency tuning and modulation capabilities in various circuit configurations.

Technical Specifications

Varactor Diodes MV209RLRA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MV209RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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