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BB119-AMMOPAK

NXP Semiconductors

BB119-AMMOPAK by NXP Semiconductors

BB119-AMMOPAK by NXP Semiconductors is a variable capacitance diode ideal for RF applications. It features a max reverse current of 2 µA, operates up to 200 °C, and has a reverse test voltage of 15 V. Its isolated case connection ensures reliable performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,502 parts In-Stock

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4,502

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Digiode

USA . 3,332 parts In-Stock

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3,332

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Anansix

USA . 743 parts In-Stock

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743

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Distributors (Availability)

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One Stop Electronics

USA . 881 parts In-Stock

1+ parts

$0.010

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881

$0.010

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Native Components

USA . 935 parts In-Stock

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$0.216

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$0.207

935

$0.216

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$0.207

Northwest PG Solutions

USA . 266 parts In-Stock

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$0.238

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$0.210

266

$0.238

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$0.210

UNI Independent Distributors

Spain . 7,331 parts In-Stock

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Corphita

USA . 1,717 parts In-Stock

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Overview

Elevate your designs with the BB119-AMMOPAK from NXP Semiconductors—a trusted leader in innovative electronic solutions. This premium varactor diode ensures exceptional performance and reliability, perfect for applications requiring precise tuning and frequency modulation. Crafted with high-quality materials and superior manufacturing standards, it delivers unmatched value, offering engineers a seamless integration experience and peace of mind in their projects. Unlock new possibilities with NXP!

Feature Benefit Bullets

Package Body Material: GLASS

The glass package body provides excellent insulation and protects the diode from environmental factors, ensuring durability and reliability in various applications.

Config: SINGLE

A single configuration simplifies design and integration into circuits, making it an efficient choice for applications requiring minimal component complexity.

Maximum Reverse Current: 2 uA

A low maximum reverse current enhances performance by minimizing power loss and improving signal integrity, ideal for high-frequency applications.

Package Shape: ROUND

The round package shape offers flexibility in installation and is compatible with various circuit layouts.

Reverse Test Voltage: 15 V

A high reverse test voltage indicates robust performance under reverse bias conditions, ensuring stability and reliability in diverse applications.

No. of Terminals: 2

Having two terminals simplifies connections and makes integration into circuit designs straightforward, enhancing usability.

Package Style (Meter): LONG FORM

The long form package style allows for better placement and thermal management, improving overall performance in demanding environments.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature ensures this diode can function effectively in harsh conditions, making it suitable for demanding applications.

Terminal Position: AXIAL

Axial terminal positioning aids in easy mounting on printed circuit boards, providing design flexibility and enhancing compatibility with different assembly processes.

Case Connection: ISOLATED

An isolated case connection enhances safety and performance by preventing unwanted current paths, ensuring reliable operation in sensitive circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is ideal for tuning and frequency modulation applications, making it a versatile choice for RF circuits.

Terminal Form: WIRE

Wire terminal form provides ease of connection and flexibility in design, facilitating seamless integration into various setups.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent performance characteristics, including stability and high efficiency, suitable for high-frequency operations.

Minimum Diode Capacitance Ratio: 1.3

A minimum capacitance ratio of 1.3 indicates good tuning range, enhancing the diode's suitability for RF applications and providing greater flexibility in circuit design.

Technical Specifications

Varactor Diodes BB119-AMMOPAK attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

1.3

Diode Element Material:

SILICON

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

2 uA

Reverse Test Voltage:

15 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB119-AMMOPAK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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