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1N5686

Onsemi

1N5686 by Onsemi

1N5686 by Onsemi is a varactor diode with 18pF capacitance, 45V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt capacitance change. With a temperature range of -65 to 175 °C, it offers precise control in various environments.

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Lifecycle Status

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2

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1k+

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Digiode

USA . 853 parts In-Stock

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Vyrian

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Native Components

USA . 431 parts In-Stock

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Northwest PG Solutions

USA . 1,205 parts In-Stock

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Kulean Microsystems

USA . 6,614 parts In-Stock

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SupplyDigital Components

Austria . 5,527 parts In-Stock

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Problanco Electronics

Mexico . 4,808 parts In-Stock

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TANS Electronics

Latvia . 2,268 parts In-Stock

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Corphita

USA . 2,119 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Unleash the power of innovation with the 1N5686 Varactor Diode by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology to meet your needs. The 1N5686 is designed for applications where variable capacitance is crucial, providing unparalleled performance and efficiency. With a wide range of operating temperatures and high-quality components, this diode offers customers exceptional value and benefits. Upgrade your projects today with the 1N5686 Varactor Diode from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 500

High quality factor ensures better performance and stability in tuning circuits.

Package Body Material: GLASS

Glass packaging provides good protection and durability for the diode.

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer precise and fast tuning capabilities.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power loss and improves efficiency.

Package Shape: ROUND

Round shape allows for easy mounting and handling in circuits.

Reverse Test Voltage: 40 V

High reverse test voltage ensures reliable operation under reverse bias conditions.

No. of Terminals: 2

Simple two-terminal design simplifies circuit connections.

Package Style (Meter): LONG FORM

Long form packaging provides ample space for circuit integration and heat dissipation.

Maximum Operating Temperature: 175 °C

High operating temperature range allows for use in a variety of environments.

Minimum Operating Temperature: -65 °C

Wide temperature range ensures reliable performance in extreme conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and electrical conductivity.

Terminal Position: AXIAL

Axial terminal position facilitates easy PCB mounting and soldering.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and shorts.

Maximum Power Dissipation: 0.4 W

High power dissipation rating allows for handling of higher power levels.

Nominal Diode Capacitance: 18 pF

Nominal capacitance value allows for precise tuning in RF circuits.

Minimum Breakdown Voltage: 45 V

High breakdown voltage ensures reliable operation under high voltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diode provides variable capacitance for frequency tuning applications.

Terminal Form: WIRE

Wire terminal form offers easy connectivity and installation.

Maximum Repetitive Peak Reverse Voltage: 40 V

High repetitive peak reverse voltage rating ensures stable performance in tuning circuits.

Diode Cap Tolerance: 20 %

Tight capacitance tolerance allows for precise tuning and frequency control.

Diode Element Material: SILICON

Silicon diode material provides good performance and reliability in RF circuits.

Minimum Diode Capacitance Ratio: 3.2

High diode capacitance ratio allows for wide tuning range and flexibility in circuit design.

Technical Specifications

Varactor Diodes 1N5686 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

18 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

500

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5686 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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