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1N5691

Onsemi

1N5691 by Onsemi

1N5691 by Onsemi is a varactor diode with 47pF nominal capacitance, abrupt variable capacitance classification, and 40V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor of 400 and low reverse current of 0.00000002uA.

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Digiode

USA . 1,573 parts In-Stock

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Vyrian

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Northwest PG Solutions

USA . 1,480 parts In-Stock

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Kulean Microsystems

USA . 5,431 parts In-Stock

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TANS Electronics

Latvia . 3,721 parts In-Stock

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Problanco Electronics

Mexico . 3,467 parts In-Stock

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SupplyDigital Components

Austria . 2,419 parts In-Stock

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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Corphita

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Corohmni

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Native Components

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Overview

Elevate your electronic designs with the Onsemi 1N5691 Varactor Diode, known for its superior quality and reliability. Manufactured by industry leader Onsemi, this diode offers precise variable capacitance and a wide range of applications in RF tuning circuits, voltage-controlled oscillators, and frequency modulators. With a durable glass package and maximum reverse current of 0.00000002 uA, the 1N5691 provides unmatched performance and stability. Trust Onsemi to deliver cutting-edge technology that exceeds expectations, giving you the competitive edge in your projects.

Feature Benefit Bullets

Minimum Quality Factor: 400

A high quality factor indicates low loss and high performance in RF applications, making this varactor diode a reliable choice for demanding applications.

Package Body Material: GLASS

Glass packaging provides better thermal resistance and can withstand high temperatures, ensuring reliability and longevity of the varactor diode.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer precise and rapid changes in capacitance with voltage, making them suitable for applications requiring fast switching speeds.

Maximum Reverse Current: 0.00000002 uA

Ultra-low reverse current ensures minimal power loss and high efficiency in the varactor diode, making it ideal for low-power applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this varactor diode can withstand harsh environments and operate reliably under extreme conditions.

Nominal Diode Capacitance: 47 pF

The specified nominal capacitance allows for precise tuning and control of the varactor diode, making it versatile for various frequency applications.

Technical Specifications

Varactor Diodes 1N5691 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.3

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5691 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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