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ESVD301

Onsemi

ESVD301 by Onsemi

ESVD301 by Onsemi is a single varactor diode with 2.6pF capacitance, suitable for X Band applications. With a max temp of 150 °C and 0.2W power dissipation, it's ideal for high-frequency circuits in chip carrier packages. The silicon diode offers variable capacitance ratio of 17 and operates at 30V reverse voltage.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,216 parts In-Stock

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Vyrian

USA . 612 parts In-Stock

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Native Components

USA . 771 parts In-Stock

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Northwest PG Solutions

USA . 158 parts In-Stock

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Problanco Electronics

Mexico . 8,129 parts In-Stock

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SupplyDigital Components

Austria . 3,830 parts In-Stock

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TANS Electronics

Latvia . 3,303 parts In-Stock

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Kulean Microsystems

USA . 2,672 parts In-Stock

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Corphita

USA . 1,275 parts In-Stock

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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Corohmni

South Africa . 377 parts In-Stock

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Overview

Unlock the full potential of your X BAND applications with the ESVD301 Varactor Diode by Onsemi. With a reputation for quality and innovation, Onsemi delivers a cutting-edge product that offers unmatched performance and reliability. The ESVD301 is designed for ease of use with its surface mount capabilities and chip carrier package style. Experience the value and benefits of variable capacitance diodes with the ESVD301 - perfect for a wide range of applications. Trust Onsemi to provide you with the best solutions for your electronic needs.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Frequency Band: X BAND

X Band frequency band offers high frequency performance suitable for radar, satellite communication, and other high-frequency applications.

Surface Mount: YES

Surface mount capability allows for easy and compact integration into circuit boards.

Package Shape: RECTANGULAR

Rectangular package shape provides stability and ease of handling during assembly.

No. of Terminals: 2

Having 2 terminals simplifies connection and ensures proper circuit placement.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers protection and efficient heat dissipation for the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and performance in demanding environments.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connection in circuits.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, the diode can handle power efficiently and reliably.

Nominal Diode Capacitance: 2.6 pF

Low nominal diode capacitance of 2.6 pF enables fast response and high-frequency operation.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance allows for tuning and adjustment in various electronic applications.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and reduces space requirements in circuit designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage of 30 V ensures protection and reliability in diverse applications.

Diode Element Material: SILICON

Silicon diode element material offers stable and consistent performance in electronic circuits.

Minimum Diode Capacitance Ratio: 17

High minimum diode capacitance ratio of 17 allows for precise tuning and flexibility in circuit design.

Technical Specifications

Varactor Diodes ESVD301 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Config:

SINGLE

Minimum Diode Capacitance Ratio:

17

Nominal Diode Capacitance:

2.6 pF

Diode Element Material:

SILICON

Frequency Band:

X BAND

JESD-30 Code:

R-XBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

ESVD301 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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