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1N5450

Onsemi

1N5450 by Onsemi

1N5450 by Onsemi is a varactor diode with a min quality factor of 350, max reverse current of 0.02 uA, and nominal capacitance of 33 pF. It is used in applications requiring variable capacitance diodes for tuning circuits due to its abrupt variable capacitance classification.

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6

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1k+

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Digiode

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Vyrian

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Electronic Expediters

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Manotoh

Italy . 97 parts In-Stock

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Fibra_Brandt Electronic GMBH

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LittleDiode

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Native Components

USA . 422 parts In-Stock

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Northwest PG Solutions

USA . 1,594 parts In-Stock

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SupplyDigital Components

Austria . 7,955 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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Corphita

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UHIMA Technologies

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Overview

Elevate your electronic projects with the 1N5450 Varactor Diode by Onsemi. Known for their superior quality and innovative technology, Onsemi delivers products that exceed industry standards. The 1N5450 is a versatile component ideal for frequency tuning, voltage-controlled oscillators, and phase-locked loops. Experience enhanced performance and reliability with this high-quality diode. Upgrade your designs and unlock new possibilities with the Onsemi 1N5450.

Feature Benefit Bullets

Minimum Quality Factor: 350

A high minimum quality factor ensures that the varactor diode has low loss and high efficiency, making it an excellent choice for high-performance applications.

Package Body Material: GLASS

Glass package body material provides good insulation properties and durability, making the varactor diode reliable in various operating conditions.

Config: SINGLE

Single configuration simplifies the circuit design and integration of the varactor diode, making it easier to use in electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification indicates fast and precise capacitance variation, allowing for quick response and accurate tuning in frequency modulation applications.

Maximum Reverse Current: 0.02 uA

Low maximum reverse current ensures minimal power loss and high efficiency in the varactor diode operation.

Package Shape: ROUND

Round package shape ensures easy mounting and installation of the varactor diode in electronic circuits, improving overall design flexibility.

Reverse Test Voltage: 25 V

High reverse test voltage capability provides protection against voltage spikes and ensures the reliability of the varactor diode in different operating conditions.

No. of Terminals: 2

Having 2 terminals simplifies the connection and integration of the varactor diode in electronic circuits, making it user-friendly for various applications.

Package Style (Meter): LONG FORM

Long form package style provides additional space for heat dissipation and ensures stable performance of the varactor diode during operation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the varactor diode to withstand elevated temperatures, making it suitable for demanding industrial and automotive applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the varactor diode can operate in cold environments without losing performance, making it versatile for various temperature conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliable electrical connections, ensuring the longevity and stability of the varactor diode in circuit applications.

Terminal Position: AXIAL

Axial terminal position simplifies the mounting and insertion of the varactor diode into circuit boards, making it easy to integrate into electronic designs.

Case Connection: ISOLATED

Isolated case connection provides protection against electrical interference and ensures the stability and reliability of the varactor diode in noisy environments.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation capability allows the varactor diode to handle high power levels without overheating, ensuring long-term performance and reliability.

Nominal Diode Capacitance: 33 pF

Nominal diode capacitance value ensures precise tuning and accurate frequency modulation in applications requiring stable capacitance values.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage ensures the varactor diode can handle high voltage levels without damage, making it suitable for high-voltage applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for precise tuning of capacitance values, making it ideal for frequency modulation and frequency control applications.

Terminal Form: WIRE

Wire terminal form provides good mechanical strength and reliable electrical connections, ensuring the durability and long-term performance of the varactor diode.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage capability ensures the varactor diode can handle voltage spikes and surges without damage, ensuring reliability in various operating conditions.

Diode Cap Tolerance: 20 %

Tolerance of 20% in diode capacitance values allows for flexibility in tuning and adjustment, making the varactor diode versatile in various frequency modulation applications.

Diode Element Material: SILICON

Silicon diode element material provides good thermal conductivity and stability, ensuring the varactor diode can operate efficiently over a wide temperature range.

Minimum Diode Capacitance Ratio: 2.6

Minimum diode capacitance ratio of 2.6 indicates a wide range of capacitance values for tuning and adjustment, making the varactor diode suitable for a variety of frequency modulation applications.

Technical Specifications

Varactor Diodes 1N5450 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5450 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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