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SVC354

Onsemi

SVC354 by Onsemi

The Onsemi SVC354 is a Varactor Diode with 52pF nominal capacitance, 16V breakdown voltage, and 200 min quality factor. It is used in applications requiring variable capacitance diodes for RF tuning circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,283 parts In-Stock

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Digiode

USA . 112 parts In-Stock

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Kulean Microsystems

USA . 7,322 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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SupplyDigital Components

Austria . 4,042 parts In-Stock

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Metaverse IC Inc.

Canada . 4,000 parts In-Stock

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TANS Electronics

Latvia . 1,661 parts In-Stock

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Problanco Electronics

Mexico . 1,499 parts In-Stock

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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Corphita

USA . 219 parts In-Stock

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Corohmni

South Africa . 196 parts In-Stock

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Overview

Enhance your electronic designs with the SVC354 Varactor Diode from Onsemi. With a minimum quality factor of 200 and a nominal diode capacitance of 52pF, this complex configuration diode offers precision and reliability for your projects. Whether you're working on RF tuning circuits or voltage-controlled oscillators, the SVC354 provides superior performance and stability. Choose Onsemi for high-quality components that deliver exceptional value and benefits to your applications.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor indicates good performance and efficiency, making this varactor diode a reliable choice for electronic applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protection for the varactor diode, making it suitable for various environments.

Config: COMPLEX

The complex configuration of this varactor diode allows for versatile uses and applications in complex electronic circuits.

Surface Mount: YES

Being surface mountable eliminates the need for through-hole mounting, making it easier to integrate into circuit boards and saving space.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to handle and install, enhancing convenience during manufacturing and assembly processes.

No. of Terminals: 6

Having 6 terminals provides flexibility in circuit connections and allows for more complex electronic designs to be implemented.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices and applications.

Terminal Position: DUAL

Dual terminal positions offer more options for connecting the varactor diode in different circuit configurations, increasing versatility.

Nominal Diode Capacitance: 52 pF

The nominal capacitance value of 52 pF ensures precise and stable performance, making it ideal for applications that require accurate capacitance control.

Minimum Breakdown Voltage: 16 V

With a minimum breakdown voltage of 16 V, this varactor diode can handle high voltage levels, providing protection against voltage spikes and surges.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels, making it suitable for tuning and frequency control applications.

Terminal Form: GULL WING

The gull wing terminal form facilitates secure soldering connections and enhances reliability in high-stress environments, ensuring long-term performance.

No. of Elements: 3

Having 3 elements provides additional functionality and performance capabilities, allowing for more advanced circuit designs and applications.

Maximum Repetitive Peak Reverse Voltage: 16 V

The maximum repetitive peak reverse voltage of 16 V ensures protection against reverse polarity conditions, safeguarding the varactor diode from damage.

Diode Cap Tolerance: 8 %

The 8% tolerance in diode capacitance allows for some variations in capacitance values without affecting overall performance, providing a margin of error in circuit design.

Diode Element Material: SILICON

Silicon is a common and reliable material for diode elements, offering excellent electrical properties and temperature stability for consistent performance.

Minimum Diode Capacitance Ratio: 17.5

The minimum diode capacitance ratio of 17.5 provides a wide range of capacitance adjustment, allowing for precise tuning and control in various electronic applications.

Technical Specifications

Varactor Diodes SVC354 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMPLEX

Diode Cap Tolerance:

8 %

Minimum Diode Capacitance Ratio:

17.5

Nominal Diode Capacitance:

52 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

No. of Elements:

3

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC354 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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