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SVC346

Onsemi

SVC346 by Onsemi

The Onsemi SVC346 is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and a Nominal Diode Capacitance of 64 pF. Commonly used in RF applications, it features a Min Breakdown Voltage of 33 V and is designed for variable capacitance needs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,178 parts In-Stock

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Vyrian

USA . 853 parts In-Stock

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853

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SupplyDigital Components

Austria . 8,170 parts In-Stock

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Problanco Electronics

Mexico . 4,934 parts In-Stock

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Kulean Microsystems

USA . 4,735 parts In-Stock

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Corphita

USA . 1,554 parts In-Stock

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TANS Electronics

Latvia . 258 parts In-Stock

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UHIMA Technologies

Türkiye . 253 parts In-Stock

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Corohmni

South Africa . 239 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality SVC346 Varactor Diodes by Onsemi. These diodes offer a minimum quality factor of 200, ensuring optimal performance in a variety of applications. With a common cathode configuration and two elements, this product provides versatility and reliability for your projects. Whether you're working on RF tuning, voltage-controlled oscillators, or frequency modulators, the SVC346 delivers exceptional value, precise capacitance control, and consistent results. Trust Onsemi's expertise and elevate your designs with the SVC346 Varactor Diodes.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor ensures better performance and stability in applications such as voltage-controlled oscillators and frequency synthesizers.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation and protection, making the varactor diode durable and reliable.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration into circuits and provides flexibility in design.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling during assembly.

No. of Terminals: 3

Three terminals provide efficient connectivity and allow for various circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is space-saving and ideal for applications where size is a constraint.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and improves heat dissipation.

Nominal Diode Capacitance: 64 pF

Capacitance value of 64 pF offers a wide range of capacitance tuning in RF circuits.

Minimum Breakdown Voltage: 33 V

High minimum breakdown voltage of 33 V ensures reliable operation and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers adjustable capacitance, making it suitable for voltage-controlled circuits and tuning applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy installation on PCBs and provides mechanical stability.

No. of Elements: 2

Two elements provide enhanced capacitance range and tuning options in RF circuits.

Maximum Repetitive Peak Reverse Voltage: 33 V

High maximum repetitive peak reverse voltage of 33 V ensures reliability and protection against reverse voltage stress.

Diode Cap Tolerance: 8 %

Capacitance tolerance of 8% ensures consistency in performance and predictable behavior in circuit applications.

Diode Element Material: SILICON

Silicon diode element material offers high stability and reliability, making the varactor diode suitable for long-term use.

Minimum Diode Capacitance Ratio: 17.5

Higher minimum diode capacitance ratio of 17.5 allows for precise tuning and frequency control in RF circuits.

Technical Specifications

Varactor Diodes SVC346 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

33 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

8 %

Minimum Diode Capacitance Ratio:

17.5

Nominal Diode Capacitance:

64 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

33 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC346 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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