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SVC353S

Onsemi

SVC353S by Onsemi

The Onsemi SVC353S is a Varactor Diode with 3 elements, common cathode config, and min. quality factor of 200. It has a min. breakdown voltage of 16V and diode cap tolerance of 3.31%. Ideal for applications requiring variable capacitance diodes in surface mount packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,391 parts In-Stock

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Digiode

USA . 685 parts In-Stock

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685

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TANS Electronics

Latvia . 8,121 parts In-Stock

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SupplyDigital Components

Austria . 6,660 parts In-Stock

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Kulean Microsystems

USA . 1,908 parts In-Stock

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Problanco Electronics

Mexico . 1,721 parts In-Stock

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UHIMA Technologies

Türkiye . 460 parts In-Stock

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460

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Corphita

USA . 248 parts In-Stock

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Corohmni

South Africa . 77 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the SVC353S Varactor Diode by Onsemi. Manufactured with precision and quality in mind, this diode offers a minimum quality factor of 200 and a minimum breakdown voltage of 16V, making it ideal for a wide range of applications. Whether you're designing RF filters, oscillators, or frequency multipliers, the SVC353S delivers exceptional performance and reliability. Experience the value and benefits of this versatile component today and take your projects to the next level.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor indicates efficient performance and signal integrity, making this varactor diode a reliable choice for electronic applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation properties and durability, ensuring the longevity and reliability of the diode.

Config: COMMON CATHODE, 3 ELEMENTS

Common cathode configuration with three elements allows for easier circuit integration and effective signal control in electronic designs.

Surface Mount: YES

Surface mount capability makes installation easy and efficient, saving time and effort during assembly processes.

Package Shape: RECTANGULAR

Rectangular shape offers compatibility with standard circuit board layouts and facilitates space-saving design implementation.

No. of Terminals: 6

Having six terminals provides flexibility in connection options and allows for versatile usage in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers compactness and efficiency in circuit design, especially in applications where space is limited.

Terminal Position: DUAL

Dual terminal position enhances signal control and simplifies input/output connectivity, ensuring optimal performance in electronic circuits.

Minimum Breakdown Voltage: 16 V

High breakdown voltage rating of 16V ensures protection against voltage spikes and ensures safe operation in diverse electronic systems.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for adjustable capacitance levels, making it suitable for frequency tuning and signal modulation applications.

Terminal Form: GULL WING

Gull wing terminal form provides secure solder connections and facilitates reliable electrical contact, ensuring stable performance in circuits.

No. of Elements: 3

Three elements offer enhanced signal control and flexibility in circuit design, making this varactor diode suitable for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 16 V

High maximum repetitive peak reverse voltage of 16V ensures robust protection against reverse current flow, enhancing the diode's reliability and longevity.

Diode Cap Tolerance: 3.31 %

Low diode capacitance tolerance of 3.31% ensures precise and consistent performance in tuning circuits, enabling accurate frequency control.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability, making it suitable for a wide range of electronic applications with consistent performance.

Minimum Diode Capacitance Ratio: 17.5

Minimum diode capacitance ratio of 17.5 indicates a high range of variable capacitance values, allowing for precise tuning and modulation in electronic circuits.

Technical Specifications

Varactor Diodes SVC353S attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 3 ELEMENTS

Diode Cap Tolerance:

3.31 %

Minimum Diode Capacitance Ratio:

17.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

No. of Elements:

3

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC353S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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