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1N5454

Onsemi

1N5454 by Onsemi

1N5454 by Onsemi is a Varactor Diode with 68pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

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Lifecycle Status

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1k+

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LittleDiode

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Kulean Microsystems

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Northwest PG Solutions

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Overview

Enhance your electronic projects with the 1N5454 Varactor Diode by Onsemi, known for its unmatched quality and reliability. This diode offers a wide range of applications in RF tuning, frequency control, and signal modulation, providing exceptional value and performance. With its precise variable capacitance and low reverse current, this diode ensures optimal functionality and efficiency in your designs. Trust Onsemi to deliver cutting-edge technology that empowers your projects to reach new heights of excellence. Elevate your creations with the 1N5454 Varactor Diode today!

Feature Benefit Bullets

Minimum Quality Factor: 175

A higher quality factor indicates better performance and efficiency in the circuit, making this varactor diode a reliable choice for high-frequency applications.

Package Body Material: GLASS

Glass packaging offers excellent protection against environmental factors and ensures long-term stability for the varactor diode.

Config: SINGLE

Single configuration simplifies the circuit design and installation process, making it easier to integrate this varactor diode into the system.

Variable Capacitance Diode Classification: ABRUPT

An abrupt varactor diode transitions quickly between capacitance states, providing precise tuning capabilities for frequency modulation applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improves overall efficiency of the circuit where this varactor diode is used.

Package Shape: ROUND

Round packaging allows for easy mounting and placement of the varactor diode on a circuit board or within a system.

Reverse Test Voltage: 25 V

With a reverse test voltage of 25 V, this varactor diode offers a suitable level of protection against reverse voltage conditions in the circuit.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors in the circuit design.

Package Style (Meter): LONG FORM

Long form packaging provides additional space for circuit connections and ensures better heat dissipation, enhancing the overall performance of the varactor diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance allows this varactor diode to function reliably in a wide range of environmental conditions without risk of overheating.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures that this varactor diode can be used in colder environments without losing functionality or performance.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals provides excellent solderability and ensures a secure electrical connection for the varactor diode.

Terminal Position: AXIAL

Axial terminal position simplifies installation and circuit layout, making it easier to integrate this varactor diode into existing systems.

Case Connection: ISOLATED

Isolated case connection reduces the risk of interference and improves the overall stability and performance of the varactor diode in the circuit.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4 W, this varactor diode can handle higher power levels and maintain stability during operation.

Nominal Diode Capacitance: 68 pF

Nominal capacitance of 68 pF indicates the range of capacitance values that can be achieved with this varactor diode, offering flexibility in tuning applications.

Minimum Breakdown Voltage: 30 V

Having a minimum breakdown voltage of 30 V ensures that this varactor diode can withstand higher voltage levels without failing or breaking down.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product allows for precise tuning of capacitance values, making it ideal for frequency modulation and tuning applications.

Terminal Form: WIRE

Wire terminal form simplifies the connection process and makes it easier to integrate this varactor diode into different circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, this varactor diode offers reliable protection against reverse voltage conditions in the circuit.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for some variation in capacitance values, providing flexibility in tuning and modulation applications for this varactor diode.

Diode Element Material: SILICON

Silicon diode element material offers stable and consistent performance characteristics, ensuring reliable operation of this varactor diode in the circuit.

Minimum Diode Capacitance Ratio: 2.7

Having a minimum diode capacitance ratio of 2.7 indicates the range of capacitance values that can be achieved with this varactor diode, offering flexibility in tuning applications.

Technical Specifications

Varactor Diodes 1N5454 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.7

Nominal Diode Capacitance:

68 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

175

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5454 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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