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1N5455

Onsemi

1N5455 by Onsemi

1N5455 by Onsemi is a varactor diode with a min quality factor of 175 and max reverse current of 0.02 uA. It has a nominal capacitance of 82 pF, making it ideal for applications requiring variable capacitance such as voltage-controlled oscillators in RF circuits. With a package shape of ROUND and isolated case connection, this diode operates b/w -65 to 175 °C.

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Overview

Unlock the potential of your electronic designs with the 1N5455 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi's varactor diodes are ideal for applications requiring precise tuning and frequency control. With a minimum quality factor of 175 and a maximum reverse current of 0.02 uA, the 1N5455 offers exceptional performance in a wide range of temperatures from -65 to 175 °C. Trust Onsemi to deliver high-value solutions that meet your design needs with ease.

Feature Benefit Bullets

Minimum Quality Factor: 175

Higher quality factor indicates better performance and efficiency of the varactor diode.

Package Body Material: GLASS

Glass material provides good insulation and protection for the diode.

Config: SINGLE

Single configuration simplifies the circuit design and makes installation easier.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures sharp and precise changes in capacitance.

Maximum Reverse Current: 0.02 uA

Low reverse current ensures minimal power loss and high efficiency.

Package Shape: ROUND

Round shape allows for easy mounting and integration into various systems.

Reverse Test Voltage: 25 V

Suitable reverse test voltage for safe operation and testing of the diode.

No. of Terminals: 2

Two terminals make for simple connection and circuit layout.

Package Style (Meter): LONG FORM

Long form package style provides adequate space for the diode and easy handling.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead finish offers good conductivity and solderability for the terminals.

Terminal Position: AXIAL

Axial terminal position facilitates easy connection and circuit layout.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures stable performance.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows for handling of larger power loads.

Nominal Diode Capacitance: 82 pF

Nominal capacitance value suitable for a wide range of applications.

Minimum Breakdown Voltage: 30 V

Higher minimum breakdown voltage offers better protection against voltage surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diodes offer adjustable capacitance for tuning circuits.

Terminal Form: WIRE

Wire terminal form allows for easy connection and reliable contact.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable peak reverse voltage for continuous and reliable operation.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for precise tuning and adjustments.

Diode Element Material: SILICON

Silicon material ensures good performance and reliability of the diode.

Minimum Diode Capacitance Ratio: 2.7

Higher capacitance ratio indicates better tuning capabilities and flexibility in circuits.

Technical Specifications

Varactor Diodes 1N5455 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.7

Nominal Diode Capacitance:

82 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

175

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5455 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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