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SVD201

Onsemi

SVD201 by Onsemi

The Onsemi SVD201 is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 1.9 pF, it has a min breakdown voltage of 27 V and operates at temperatures up to 150 °C. This surface-mount diode in microwave package style is made of gallium arsenide and offers a max power dissipation of 0.2 W.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 990 parts In-Stock

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Digiode

USA . 452 parts In-Stock

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Problanco Electronics

Mexico . 3,585 parts In-Stock

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SupplyDigital Components

Austria . 3,098 parts In-Stock

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TANS Electronics

Latvia . 2,218 parts In-Stock

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Kulean Microsystems

USA . 1,980 parts In-Stock

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Corphita

USA . 1,287 parts In-Stock

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Corohmni

South Africa . 277 parts In-Stock

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UHIMA Technologies

Türkiye . 197 parts In-Stock

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Overview

Experience unmatched performance and reliability with the SVD201 by Onsemi. As a leader in manufacturing Varactor Diodes, Onsemi ensures top-notch quality and innovation in every product. The SVD201 offers hyperabrupt variable capacitance diode classification, making it perfect for X band frequency applications. With its surface mount capability and flat terminal form, this diode provides convenience and efficiency in various electronic devices. Trust Onsemi's expertise and elevate your projects with the exceptional value and benefits of the SVD201.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to integrate this varactor diode into various circuit designs.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt varactor diodes offer fast response times and precise tuning capabilities, making them ideal for high-frequency applications in the X band.

Frequency Band: X BAND

Specifically designed for X band applications, ensuring optimal performance in that frequency range.

Surface Mount: YES

Surface mountable for easy and convenient installation on PCBs, saving space and reducing assembly time.

Package Style (Meter): MICROWAVE

Microwave package style ensures efficient heat dissipation and high frequency operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2W, this varactor diode can handle power efficiently without overheating.

Nominal Diode Capacitance: 1.9 pF

Low nominal capacitance enables precise tuning and frequency control in RF circuits.

Minimum Breakdown Voltage: 27 V

High minimum breakdown voltage ensures the diode can withstand voltage spikes and surges without damage.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for frequency modulation and tuning, essential in RF and microwave applications.

Terminal Form: FLAT

Flat terminals are easy to solder and provide a secure connection in the circuit.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum reverse voltage rating ensures protection against reverse polarity and voltage transients.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide diode element material offers high-speed switching and low noise characteristics, ideal for high-frequency applications.

Minimum Diode Capacitance Ratio: 11

High minimum capacitance ratio allows for wider tuning range and flexibility in frequency control.

Technical Specifications

Varactor Diodes SVD201 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

27 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

11

Nominal Diode Capacitance:

1.9 pF

Diode Element Material:

GALLIUM ARSENIDE

Frequency Band:

X BAND

JESD-30 Code:

X-XXMW-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROWAVE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

SVD201 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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